项目名称: 电场调控尖晶石型铁氧体薄膜阻变与磁性及其关联特性研究
项目编号: No.11504101
项目类型: 青年科学基金项目
立项/批准年度: 2016
项目学科: 数理科学和化学
项目作者: 朱永丹
作者单位: 湖北民族大学
项目金额: 24万元
中文摘要: 尖晶石型铁氧体薄膜电致阻变效应及其与阻变相关联的磁调制,拓展了该类材料的物理内涵与应用领域,研究电场调控尖晶石型铁氧体薄膜阻变与磁性及其关联特性,融合电荷与自旋两大属性,具有重要的物理意义与应用前景。本项目拟采用磁控溅射法制备尖晶石型铁氧体薄膜与电极材料,构筑电极/尖晶石型铁氧体薄膜/电极结构原型器件。研究制备条件、退火方式、薄膜类型、器件结构、电极材料等对薄膜电致阻变与薄膜磁性的影响规律;研究薄膜不同阻态的磁性,观测电阻转变与磁畴翻转的微观规律,获得电场调控薄膜阻变与磁性的规律;研究薄膜不同阻态的磁电阻以及磁场对阻变效应的影响,获得磁场调控阻变的规律;结合电场、磁场的协同作用,获得电场调控尖晶石型铁氧体薄膜阻变与磁性的关联特性,深入理解电阻/磁性的电场调控机制,为有可能的新型阻变/磁性耦合与调制器件提供前期的研究基础。
中文关键词: 氧化物异质结;电致阻变;磁性调控;关联机制
英文摘要: The resistive switching effect and correlated magnetic modulation in spinel ferrite thin films have expanded its physical connotation and potential application. It shows scientific importance and application potential to study the electric modulated resistive switching and magnetic and their correlation which integrate the two attributes of charge and spin in spinel ferrite thin films. In this project, we intend to fabricate spinel ferrite thin films and electrode materials to construct electrode/spinel ferrite thin film/electrode prototype devices by magnetron sputtering. The effects of preparation parameters, annealing methods, film types, device structures and electrode materials on the resistive switching and magnetic of films will be extensively explored. The magnetic corresponding to the different resistance states and the microcosmic law of resistive switching and magnetic domain reversal in films will be investigated to obtain the law of electric modulated resistive switching and magnetic in films. The magnetoresistance corresponding to the different resistance states and the effects of magnetic to resistive switching in films will be researched to figure out the law of magnetic modulated resistive switching. Moreover, studies will also be conducted on the correlation of electric modulated resistive switching and magnetic in spinel ferrite thin films in combination with electric and magnetic field to make deep understanding of the electric modulated mechanism of resistance/magnetism and provide basis of early research for new-type resistive switching/magnetic coupling devices.
英文关键词: Oxide heterostructures;Resistive switching;Magnetic modulation;Correlation mechanism