可控自组织锗硅量子点物理特性的系统研究

项目名称： 可控自组织锗硅量子点物理特性的系统研究

项目编号： No.11474055

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 数理科学和化学

项目作者： 钟振扬

作者单位： 复旦大学

项目金额： 94万元

中文摘要： 自组织GeSi量子点由于其独特的物理特性和硅集成技术的兼容性已经成为半导体材料和器件研究的一个热点。但是，在平的Si衬底上生长的GeSi量子点其空间和尺寸分布相当不均匀，从而大大阻碍了对其独特物理特性和器件应用的研究。本项目系统研究图形化Si衬底上的可控自组织GeSi量子点。通过引入表面微结构，实现在图形化衬底上自组织GeSi量子点（包括单个量子点、量子点分子和有序量子点体系）的精确可控生长；系统研究GeSi量子点的物理特性，理清由于量子限制效应所引起的单个量子点的独特物理性质和由于量子点相互作用引起的量子点间的耦合特性和有序量子点体系的集合特性，探索利用对量子点结构特性的精确控制实现对其物理特性的调控方法；研究外场对单个量子点，量子点分子和有序量子点体系的物理特性的影响，探索利用外场调控量子点物理特性的方法; 探索基于GeSi量子点的高性能的光电元器件，为适用于硅基上的集成化芯片的新型.

中文关键词： 半导体量子点；图型化衬底；光电性质；量子点耦合；可控生长

英文摘要： Self-assembled GeSi quantum dots (QDs) have been extensively studied due to their unique properties and the compatibility with the sophsticated Si integration technology. However, the GeSi QDs on flat Si substrates are always spatially random and have a broad size distribution. These disadvantages greatly hapmer the studies of the unique properties and the applications of GeSi QDs. In this project, systematic studies on the self-assembled GeSi QDs readily controlled on patterned Si (001) substrates are carried out. By introducing deliberate surface microstructures, the precisely controlled growth of GeSi QDs, including single QD, QD molecule and ordered QDs, is realized on the patterned substrates. The physical properties of the controlled GeSi QDs are systematically investigated to clarify the unique features of the single QD due to quantum confinement effect and the coupling and the collective properties of QDs induced by the interaction between QDs. Moreover,the methods of modifying the physical properties of QDs via precisely controlling the structural properties of QDs are explored. The effects of external fields on the physical properties of the single QD, the QD molecule and the ordered QDs are studied to explore ways to adjust the properties of QDs by the external field. The optoelectronic devices of high performance based on GeSi QDs are explored to provide the base for further studies of the novel devices compatible with the Si-based integrated chips.

英文关键词： semiconductor quantum dots;patterned substrates;optoelectronic properties;coupling among quantum dots;controllable growth