LED芯片衬底材料近极限光滑表面高效平坦化原理与方法

项目名称： LED芯片衬底材料近极限光滑表面高效平坦化原理与方法

项目编号： No.91223202

项目类型： 重大研究计划

立项/批准年度： 2013

项目学科： 机械、仪表工业

项目作者： 潘国顺

作者单位： 清华大学

项目金额： 290万元

中文摘要： 目前，发光二极管（LED）制造技术快速发展，为了提高LED发光效率，降低成本，对蓝宝石（Al2O3）、碳化硅（SiC）等LED芯片衬底材料表面平整度、光洁度以及材料去除速率等提出了更高的要求，其中对表面光洁度的要求更是接近了物理极限值，对难加工衬底材料表面平坦化提出挑战。为实现LED芯片衬底材料高效去除和近极限光滑无损伤表面的制造，我们提出在平坦化中引入接触催化原理与极小纳米抛光粒子相结合的思路，通过探索平坦化中具有催化作用的抛光垫、抛光粒子与晶片表面材料的接触催化行为、材料去除机制与平坦化原理，以实现难加工材料快速去除和高效平坦化；同时，通过探索平坦化中极小纳米粒子行为、粒子粒度变化过程中材料去除机制的演变规律、平坦化过程中原子级去除机制，以实现近极限光滑表面制造，为未来LED芯片等先进电子产品的纳米制造提供新的原理、技术与理论支持。

中文关键词： LED 芯片衬底；催化；极小纳米粒子；化学机械抛光；-

英文摘要： At present, with the rapid development in the light emitting diode (LED) manufacturing technology, Higher requirements for the surface smoothness, finish and material removal rate of LED chips substrate, such as the sapphire (Al2O3), silicon carbide (SiC) have been put forward to enhance the LED luminous efficiency and reduce the cost, in which the demand for the surface finish approach to their limit value. This naturally poses a great challenge to the surface planarization for the difficult machining substrate materials. To attain the LED chips substrate with highly effective removal and close-to-smooth-limited surface without damage, this project puts forward a new thought that combine contact catalysis principle and minimum nanoabrasives in the planarization, study the contact catalysis behavior 、material removal mechanism and planarization principal among the polishing pad 、abrasive grains with catalytic activation and wafer surface, and realize the rapid removal and high effective planarization of difficult-to-machine substrate materials. At the same time, through the exploration of the minimum nanoparticles behavior、the rule of material removal mechanism evolution and atom level removal mechanism in the planarization, realized close-to-smooth-limited surface manufacturing, and finally provided an new prin

英文关键词： LED chips substrate；catalysis；minimum nanoparticle；Chemical mechanical polishing；