基于声发射技术的CMP抛光机理分析及抛光状态在线监测理论方法研究

项目名称： 基于声发射技术的CMP抛光机理分析及抛光状态在线监测理论方法研究

项目编号： No.51275263

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 机械、仪表工业

项目作者： 何永勇

作者单位： 清华大学

项目金额： 86万元

中文摘要： 化学机械抛光（CMP）是目前唯一能获得晶圆全局平坦化效果的加工方法并已成为IC制造领域至关重要的核心技术。而随着IC工业的发展，需进一步提高抛光质量和抛光效率并降低缺陷率，深入认识CMP抛光机理、对抛光过程和状态进行在线监测和检测显得越来越重要和必要。声发射技术已发展成为较成熟的技术并已在精密和超精密加工领域得到了成功应用，尤其是模态声发射技术的提出以及材料损伤力学研究成果的引入，使进一步探索材料表面微纳尺度材料去除过程的声发射机制成为了可能。本项目将声发射技术引入CMP抛光研究领域，对CMP抛光机理、晶圆表面材料去除机制、抛光垫性能演变和晶圆表面缺陷检测进行系统的理论探索和实验研究，发展基于声发射技术的CMP声发射技术的CMP抛光机理研究方法、抛光界面状态在线监测和抛光缺陷在线检测技术。这一研究不仅会促进声发射的发展，也为CMP抛光技术的研究提供一种新的有效方法和手段。

中文关键词： 声发射；化学机械抛光；划痕损伤；状态监测；

英文摘要： Chemical-mechanical-planarization (CMP) has become the very crucial technique of IC (Integrated Circuit) manufacturing, by which the grobal planarization of wafer can be achieved. With the development of IC industry, higher and higher polishing performance is required, and the rate of polishing defect need to be controlled further. Therefore, it is necessary to deeply research the CMP polishing mechanism and develop the techniques of on-line condition monitoring and defect detection during polishing process. Acoustic emission (AE) technique is becoming more and more attractive and has been applied successfully to the area of precise and ultra-prcise manufacturing. In addition, modal analysis method and the demage mechanics of material have been introduced into the area of AE technique, which makes it possible to research and explore the mechanism and characteristics of AE when the material removal of micro/nano scale occurs on the object. Therefore, in this project, AE technique is introduced into the area of the CMP technique to propose and develop AE technique based methods of polishing mechanism resaerch, on-line polishing condition monitoring, on-line performance monitoring and evaluation of polishing pad and on-line polishing defect detection.It could be expected that the implement and accomplishment of thi

英文关键词： Acoustic emission；CMP；Scratch damage；Condition monitoring；