碳化硅零件氧化辅助抛光加工机理与关键工艺研究

项目名称： 碳化硅零件氧化辅助抛光加工机理与关键工艺研究

项目编号： No.51505498

项目类型： 青年科学基金项目

立项/批准年度： 2016

项目学科： 机械、仪表工业

项目作者： 沈新民

作者单位： 中国人民解放军陆军工程大学

项目金额： 21万元

中文摘要： 碳化硅以其卓越的物理化学性能在工业领域中得到广泛应用，氧化辅助抛光是获得高精度碳化硅零件的重要加工技术。目前，国内外在碳化硅氧化辅助抛光的实验研究方面取得了可喜成果，能够获得原子级超光滑单晶碳化硅表面和高精度烧结碳化硅表面。但是，碳化硅零件氧化辅助抛光加工机理的研究尚未取得突破进展，对工艺参数的选择也缺乏有效的理论支撑，限制了氧化辅助抛光技术在碳化硅零件超精密加工中的应用。本项目拟以碳化硅零件氧化辅助抛光的加工过程研究为切入点，构建基于第一性原理计算和分子动力学模拟的碳化硅氧化模型和氧化层抛光模型，以理论研究与实验分析相结合的方式研究加工机理；构建以工艺参数为对象、以材料去除效率和表面质量为目标的人工神经网络优化模型，通过理论建模与实验验证相结合的方式实现工艺参数优化。本项目有望在碳化硅零件氧化辅助抛光加工机理与关键工艺研究上取得创新性研究成果，促进碳化硅零件超精密加工工艺水平的提升。

中文关键词： 氧化辅助抛光；加工机理分析；分子动力学模拟；工艺参数优化；人工神经网络

英文摘要： Silicon carbide has been widely used in the industrial fields for its excellent physical and chemical properties, and oxidation-assisted polishing is an important machining technique for obtaining silicon carbide parts with high precision. Up to now, amazing productions have been achieved in the experimental research on oxidation-assisted polishing of silicon carbide in both domestic and abroad, and atomically ultra-smooth single crystal silicon carbide surface and high precision reaction sintered silicon carbide surface had been obtained. However, the research on machining mechanism in oxidation-assisted polishing of silicon carbide parts has not gained breakthrough, and the selection of process parameters is devoid of effective theoretically support, which limit the application of oxidation-assisted polishing technique in the ultra-precision machining of silicon carbide parts. This project takes the research on machining program of oxidation-assisted polishing of silicon carbide parts as section start, and the model for oxidation of silicon carbide and model for polishing of oxide layer are constructed based on First Principle calculation and Molecular Dynamics simulation. The research on machining mechanism is obtained through the combination of theoretical investigation and experimental analysis. The optimization model based on Artificial Neural Network is built, which takes the process parameters as object and takes the material removal rate and surface property as aim. The optimization of process parameters is obtained by the combination of theoretical modeling and experimental validation. Innovatory research productions on machining mechanism and pivotal process in the oxidation-assisted polishing of silicon carbide parts can be obtained through this project, which will promote the process level in ultra-precision machining of silicon carbide parts.

英文关键词： Oxidation-assisted Polishing;Machining mechanism analysis;Molecular Dynamics simulation;Process parameters optimization;Artificial Neural Network