适于阻变存储器无源交叉阵列的双向选通管及其物理机制研究

项目名称： 适于阻变存储器无源交叉阵列的双向选通管及其物理机制研究

项目编号： No.61574070

项目类型： 面上项目

立项/批准年度： 2016

项目学科： 无线电电子学、电信技术

项目作者： 李颖弢

作者单位： 兰州大学

项目金额： 16万元

中文摘要： 三维存储技术被认为是未来实现超大容量数据存储的关键途径。阻变存储器(RRAM)由于其结构简单、性能优越、与CMOS工艺兼容、易于三维集成而引起了广泛关注。然而，缺乏合适的选通管是RRAM实现三维集成的主要障碍之一。本项目针对这个关键问题，结合目前该领域的研究现状和已有的研究基础，选取具有双向导通特性的非线性电阻件为研究对象，从器件的材料、结构、制备、物理机制等方面出发，阐明双向选通管器件的内在物理机制，研制具有高电流密度、高非线性系数、高可靠性、可适于阻变存储器无源交叉阵列的双向选通管器件。为实现超高密度RRAM无源交叉阵列的三维集成奠定基础，从而推动我国存储器技术的发展。

中文关键词： 阻变存储器；双极性；交叉阵列；非线性双向选通管；三维集成

英文摘要： Three-dimensional (3D) storage technology is considered to be the most effective method to satisfy the future requirement of ultra-large capacity data storage. In recent years, resistive random access memory (RRAM) device has received extensive attention and considered as one of the most promising candidates for future ultra-high density storage application due to its simple structure, good scalability, excellent compatibility with CMOS technology, and ease to 3D integration. However, the lack of suitable selector is one of the main obstacles to realize 3D integration of RRAM. For the key issue, this project will focus on the investigation of bidirectional selector with nonlinear I-V characteristics. To obtain satisfactory selector, which has large current density, high nonlinear factor and high reliability, for RRAM passive crossbar array application, the bidirectional selector with nonlinear resistor behavior will be systemically investigated and optimized based on the materials, device structure, fabrication process, and physical mechanism. The successful implementation of this project will provide important guidelines for the realization of the high-density 3D integration of bipolar RRAM, which is expected to get a lot of original research achievements with independent intellectual property rights in RRAM fi

英文关键词： Resistive random access memory；Bipolar；Crossbar array；Nonlinear bidirectional selector；Three-dimensional integration