单晶石墨烯的可控制备、边界调控和性能研究

项目名称： 单晶石墨烯的可控制备、边界调控和性能研究

项目编号： No.21273243

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 数理科学和化学

项目作者： 武斌

作者单位： 中国科学院化学研究所

项目金额： 80万元

中文摘要： 近年来，因其优异的电学性能，二维单层石墨烯材料成为世界范围内的研究热点。深入认识石墨烯的生长规律并制备出符合要求的高质量材料是本领域的基本科学问题之一。本课题以化学气相沉积技术在液态催化剂和绝缘基底表面上制备单晶石墨烯为中心，探索其大小、层数、排列等的调控。另一方面，探索在非平衡态下单晶石墨烯边界结构的可控自组织生长与相关边界结构的确认和性能。进而深入系统地研究制备的单晶石墨烯材料的本征电学性能，阐明影响器件相关性能的因素。本研究内容集材料制备和性能，针对当前石墨烯材料制备发展的要求和存在的问题，以新型液态催化剂生长石墨烯，对于石墨烯的生长规律和本征性能的认识以及制备高性能的材料具有重要的意义。石墨烯边界结构的调控研究提供了物质在非平衡态下无序到有序的转变最理想的模型体系，具有广泛的意义。

中文关键词： 单晶石墨烯；绝缘基底；液态铜；六方氮化硼；化学气相沉积

英文摘要： Graphene, a two-dimensional monolayer form of carbon atoms, has attacted worldwide attention due to its excellent electronic properties in past few years. One of the key challenges in the field of graphene synthesis is to further understand the growth mechanism and produce high-quality materials. This study will focus on the system of single-crystal graphene produced by a chemical vapor deposition method using liquid and insulating materials as catalysts, and explore the manipulation of its size、layer number and relative orientation among different graphene flakes. On the other hand, this project will systematically study the controlled formation of self-organized graphene structure with modulated edge under non-equilibrium conditions and the properties of the graphene with novel edge structure. Moreover, this study is aimed to figure out various effects of device fabrication processes on precise evaluation of intrinsic electronic properies of as-grown graphene.The project involves both material synthesis and their electronic device properties, and is important for addressing current problems associated with graphene material production and property characterization. The study of graphene edge structure evolution also provides an ideal, simplest system for exploring pattern formation by self-organization in non-

英文关键词： single crystal graphene；insulator substrate；liquid copper；hexagonal boron nitride；chemical vapor deposition