蓝宝石图形衬底上MOCVD定向控制生长半极性（11-22）GaN研究

项目名称： 蓝宝石图形衬底上MOCVD定向控制生长半极性（11-22）GaN研究

项目编号： No.61204011

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 信息四处

项目作者： 邢艳辉

作者单位： 北京工业大学

项目金额： 28万元

中文摘要： 本项目研究在r－面蓝宝石图形衬底上制备半极性（11-22）GaN材料MOCVD生长技术，具体的研究内容是在GaN材料半极性面的MOCVD定向控制生长技术和采用图形衬底降低位错密度。提出了一种新的两步解决问题的研究方法，即一是通过掌握生长条件与不同晶向生长速率的关系以解决孪晶问题，二是通过定向生长技术与图形衬底技术结合以解决目前半极性GaN材料生长中存在的孪晶及位错密度高的问题。制备的半极性（11-22）GaN材料方位角在平行和垂直于c-方向的X衍射曲线峰值半高宽分别不高于750arcsec，450arcsec，表面粗糙度不大于5nm。本课题的研究对解决目前GaN材料的极化问题，提高GaN基发光二极管性能，扩展GaN基材料的发射波长到橙黄光波段具有重要意义。

中文关键词： 氮化物；半极性GaN； MOCVD；XRD；

英文摘要： This project research to fabricate semipolar（11-22）GaN material on r-plane sapphire patterned substrate by MOCVD. The detail research is to control of the oriented growth rate of semipolar plane of GaN material and to decrease dislocation density by patterned substrate. We propose a new two steps research method to resolve this problem in preparing semipolar（11-22）GaN material, The first step is to understand and control the relation between different crystal oriented growth rates and growth conditions to resolve twins , The second step is to combine the two technics of oriented growth and patterned substrate to resolve the problem of twins and high dislocation density in the current semipolar GaN material. We will achieve semipolar (11-22) GaN material whose azimuth angle at parallel and vertical to c- direction of X-ray diffraction full width at half maximum (FWHM) are less than 750arcsec，450arcsec, respectively. Surface roughness are less than 5nm. This project for resolving the polarization of GaN material, improving the performance of GaN LED, extending GaN LED emitting wavelength to orange-yellow wave band, is very important.

英文关键词： Nitride；semipolar GaN； MOCVD；XRD；