纳米晶/定向金刚石薄膜的场效应光敏器件的制备科学和光电特性研究

项目名称： 纳米晶/定向金刚石薄膜的场效应光敏器件的制备科学和光电特性研究

项目编号： No.60877017

项目类型： 面上项目

立项/批准年度： 2009

项目学科： 金属学与金属工艺

项目作者： 王林军

作者单位： 上海大学

项目金额： 34万元

中文摘要： 基于金刚石薄膜的电子器件能够在硅器件无法应用的场合发挥不可替代的作用，特别是基于场效应原理的光敏晶体管将具有重要的应用前景，预期可实现高温、高速、高功率和高抗辐照器件。 针对目前单晶金刚石薄膜和n型掺杂技术还未突破，本项目拟采用两种材料用于光敏晶体管的p型沟道，有望简化器件制作工艺并可同时改善器件性能：（1）非掺杂氢终端高度[001]定向金刚石薄膜；（2）在一定厚度的非掺杂[001]定向金刚石薄膜上，通过改变工艺参数再沉积一层纳米晶薄膜，这种复合材料有望获得厚度满足要求的光滑表面。在此基础上，对光敏晶体管进行优化设计，解决肖特基势垒栅场效应晶体管关键制备技术，揭示薄膜沟道层参数、晶粒取向性、晶粒尺寸纳米化、器件结构尺寸与器件光电性能之间的影响规律，为获得超高速、大功率场效应光敏晶体管提供实验和理论依据，为我国新型光敏晶体管的发展打下基础，并使这一领域的研究水平能迅速跻身于世界先进行列。

中文关键词： 场效应晶体管；金刚石薄膜；光敏器件

英文摘要： Diamond-film-based field-effect transistors (FETs) can be expected to play an important role for the application in environments of high temperature, high frequency, high power and high radiation flux under which silicon-based devices could not operate well. Due to the lack of mature way to prepare single crystal and n-type doped diamond film, optically activated field-effect transistors (OPFETs) were fabricated using undoped nanocrystalline and [001]-orientated hydrogen terminated diamond film as the p-channel, in order to simplify the fabrication technology and improve the device performance. The main results obtained as follows: Nanocrystalline diamond films and [001]-orientated freestanding-diamond films were prepared by controlling the deposition parameters using microware plasma chemical vapor deposition (MPCVD) method. We developed the hydrogen plasma treatment to obtain p-type hydrogen-terminated diamond conduction layers for MESFET devices. Sivlaco TCAD and FE based Ansys software were used to simulate the configuration and performance parameters of diamond MESFET devices. The simulation results provided a key basis for the device fabrication. The electrode technology was resolved and hydrogen-terminated diamond OPFETs were successfully fabricated using the photo-lithography mask technology.This FET device obviously indicated the enhanced transistor characteristics, and could be UV-sensitive effectively with a peek responsivity of 1.25A/W and an adsorption edge at 230nm. On the basis of above diamond MESFETs, we also developed a high temperature and power FET using boron-doped single diamond film, and photo-sensitive devices using ZnO/freestanding dimoand composite structure.

英文关键词： field-effect transistors; diamond films; photo-sensitive devices