高压下V-VI族化合物半导体材料的结构相变和物性

项目名称： 高压下V-VI族化合物半导体材料的结构相变和物性

项目编号： No.11304114

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 数理科学和化学

项目作者： 马艳梅

作者单位： 吉林大学

项目金额： 30万元

中文摘要： 半导体化合物材料在能源、光电子、光探测等方面具有广泛的应用前景，具有半导体性质的V-VI族化合物的高压结构相变与相稳定性研究已成为当今凝聚态物理的重要前沿课题之一。目前，V-VI族化合物的研究多局限在纳米材料的制备上，对其高压研究也少有报道，在高压相变产生的物理机制和高压新相的结构确定等方面问题一直处于令人费解的状态，导致许多高压下的新奇现象无法解释，如压致超导、压力提高材料的热电性能等。本项目拟采用原位高压X射线衍射、原位高压电学等实验技术手段，结合第一性原理模拟，系统研究V-VI族半导体材料的高压结构相变，高压新相的结构确定，探索高压金属化和可能的压致超导现象，结合理论计算揭示高压相变产生的物理机制，为认识高压下半导体化合物材料相变的机制与规律提供实验依据和理论支持，为解释高压下的新奇现象奠定知识储备。

中文关键词： 半导体材料；高压相变；晶体结构；电输运性质；

英文摘要： Semiconductors have widely been applied in energetic, optoelectronic fields and light detection devices. The high-pressure structural phase transition and phase stability of V-VI group semiconducting compounds has been focused in the high-pressure science. At present,the study of V-VI family compoud have been limited on the preparation of nanometer materials, the high pressure research also seldom reported.The physical mechanism of the high-pressure phase transition and the determination of crystal structure are long-puzzling.Many novel phenomenon cannot be explained.In this project, the high-pressure structural phase transition of semiconducting materials in V-VI group compounds will be systematically studied by in situ high-pressure X-ray diffraction, high-pressure electrical measurement technology, and ab initio principle calculation. The high-pressure metallized and possible pressure-inducing superconductive phenomenon will be explored.The project will focus on determining the structure of high-pressure phase for V-VI group compounds and discovering the physical mechanism of the high-pressure phase transition. This work is helpful to understand the mechanism of electricity-phonon interaction and provid the important experiment data and theoretical reference .

英文关键词： semiconducting materials；high-pressure phase transition；crystal structure；electrical transport properties；