项目名称: 新型光电化合物铯锡碘CsSnI3薄膜的制备与基本材料问题研究及其全新太阳电池的原位构筑
项目编号: No.51302058
项目类型: 青年科学基金项目
立项/批准年度: 2014
项目学科: 一般工业技术
项目作者: 罗派峰
作者单位: 合肥工业大学
项目金额: 25万元
中文摘要: 最近,新型化合物材料CSI优异的光电特性引起人们的广泛关注,但目前仍存在薄膜制备及稳定性等基本材料问题需要解决。针对上述问题,本项目设计了新颖的液-固混合工艺制备单相靶材,选择靶膜成分一致的PLD技术来制备高质量CSI薄膜,提出卤素掺杂工艺来解决材料稳定性等关键问题;并重点研究卤素掺杂对材料晶体结构相变、载流子输运性质及稳定性的影响规律。同时,本课题还将尝试其光伏薄膜器件的探索,在PLD腔中原位构筑结构为Glass/Mo/CSI/n型材料/AZO/Ni-Al的全新薄膜太阳电池;重点研究异质结材料的晶格匹配及带隙排列规律,解决CSI异质结的n型匹配材料问题。本项目的成功实施,预期将揭示CSI材料的晶体结构相变及掺杂稳定机理,为其薄膜材料的实验制备及理论研究提供新的思路,可望推动该新型光电化合物材料在光伏领域的进一步应用,因而具有重要的科学意义及潜在的应用前景。
中文关键词: 新型光电化合物;铯锡碘薄膜;脉冲激光沉积;太阳能电池;稳定性
英文摘要: In recent years, the new compound material CSI with excellent photoelectric properties has attracted comprehensive attentions, but still exists some basic material problems to be solved so far, such as the preparation of its thin films and the stability. In view of above questions, a novel liquid-solid mixing precss is empoyed to synthesize the single-phase target, and the PLD technology with good composition control between the target and the films is picked out as the problem solving of preparing high quality films in this research. We present the halogen doping process to improve the stability of the material, and detailed research on the effect of doping on the material crystal structure transformation, carrier transport properties and the stability. Meanwhile, we try to built its brand-new photovoltaic thin film device with structure of Glass/Mo/CSI/n type material/AZO/Ni-Al using in situ PLD method. We will focus on the lattice matching and the band gap arrangement rule of heterojunction materials, and figure out the n type matching material with CSI heterojunction. Based on the successful project implementation, it is expected to further reveal the phase change of the crystalline structure and the doping stabilitzation mechanism, providing a new research idea for its thin films preparation and theoretical
英文关键词: New photoelectric compound;CsSnI3 films;Pulsed laser deposition(PLD);Solar cells;Stability