基于柔性衬底的CMOS器件研究

项目名称： 基于柔性衬底的CMOS器件研究

项目编号： No.61274086

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 无线电电子学、电信技术

项目作者： 刘洋

作者单位： 电子科技大学

项目金额： 85万元

中文摘要： 基于柔性衬底的CMOS技术在不久的将来凭借其低成本、低功耗、生产简易性和可大面积生产等突出优势在智能标签、便携式显示器、小型计算芯片等应用中有着广阔的发展前景，给人们的生活带来全新的体验甚至革命性的变革.在本课题中，我们计划理论模拟各类低温生长的金属氧化物半导体的电子学结构，设计薄膜晶体管、模拟电荷传输、漏电流和转移曲线等特性。摸索在柔性衬底上（例如塑料、纸张）制作非晶态半导体以及栅极电介质薄膜的工艺条件，用各类表征手段对材料进行结构和组分测量，结合实验数据优化制作工艺，使半导体薄膜具有适当的导电性能同时又有较高的电荷迁移率，使电介质层具有理想的电阻系数和介电常数。在柔性衬底上制作CMOS器件，并对这些器件进行电学方面的表征，结合制作模拟和表征来提高器件的性能和可靠性。最后运用基于柔性衬底的CMOS器件设计和验证简单的电路。

中文关键词： 柔性器件；柔性电路；柔性声表波器件；柔性神经网络；柔性电子皮肤

英文摘要： Flexible CMOS technology shows advangtages in fabrication of RFID,portable monitor, small scale CPU and other ICs based on its low cost , low power consumption, simple processes and large area fabrication. It will surely bring us new experience and convenience in our life. In this project, we are going to simulate the electronic structure of several types of metal oxide semiconductor, to design thin film transistor with MEDICI and TSuprem-4, and study the current transport, leakage current and transfer characteristics. We will investigate the fabrication process of amouphous metal oxide semiconductor and gate material under low temperature.The material properties will be characterized with various techniques such as TEM, XRD, and XPS. It is prospected to synthesize semiconductor thin film with high charge mobility and dielectrics with good resistance and dielectric constant. Furthermore, we will fabricate CMOS devices on a flexible substrate and characterize them. Co-related with the simulation result and device characterization processes should be modified to improve the device performance and reliability. We will implement some digital and analog ICs on flexible substrate.

英文关键词： flexible device；flexible circuit；flexible SAW device；flexible neural network；flexible electronic skin