铁电薄膜应用于铁电随机存储器的失效机理研究

项目名称： 铁电薄膜应用于铁电随机存储器的失效机理研究

项目编号： No.61201046

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 电子学与信息系统

项目作者： 朱慧

作者单位： 北京工业大学

项目金额： 25万元

中文摘要： 铁电随机存储器因其具有非挥发、抗辐射、高速度、低电压等优点成为下一代新型存储器的重要发展方向之一，而其中铁电薄膜所具有的疲劳、印记、保持损失等退化失效是影响存储器可靠性与稳定性的重要因素。本项目主要针对铁电薄膜的失效展开研究，分析失效机理，探索导致失效的根本原因，并提出改善方案以获得性能优异可靠的存储器件。主要研究内容包括：(1)通过研究锆钛酸铅（PZT）铁电薄膜的I-V、C-V性能，分析铁电薄膜疲劳过程中缺陷的变化与作用，揭示疲劳的微观机理；(2)通过综合分析疲劳、印记与保持损失，揭示不同失效之间的联系与影响，分析引起失效的根本原因；(3)探索提高铁电薄膜耐疲劳性、极化保持能力的方法，改善铁电存储器性能。该项目的实施，对于铁电薄膜的应用基础研究具有重要的意义，并为长寿命、高密度铁电存储器的进一步研制提供实验基础及依据。

中文关键词： 铁电薄膜；疲劳；体电阻率；氧空位；残余应力

英文摘要： Ferroelectric random access memories are currently one of the leading candidates for next generation nonvolatile memory devices resulting from its favorable characteristics, such as high speed, low voltage, and good radiation tolerance etc. The degradation properties of ferroelectric thin films including fatigue, imprint and retention loss are important issues related with the reliability and stability of such devices, which should be investigated extensively. This project aims to establish fundamental understanding of the failure mechanisms and optimize the degradation properties simultaneously. The research involve: (1) studying the role of defects by applying I-V and C-V characterizations through a fatigue process to uncover the microscopic mechanisms of fatigue; (2) analyzing the correlation among different degradation behavior by the combination study of fatigue, imprint, and retention loss; exploring the failure mechanisms on the basis of the overall systematic research; (3) developing approaches to improve the fatigue resistance and polarization retention property of ferroelectric memories. The implementation of the project will establish basic theories of how defects affect the degradation properties and break through the research of failure mechanisms of ferroelectric thin films. It will also promo

英文关键词： ferroelectric thin film；fatigue；bulk resistivity；oxygen vacancy；residual stress