方钴矿热电材料YSZ涂层的EBPVD制备及服役过程界面扩散行为研究

项目名称： 方钴矿热电材料YSZ涂层的EBPVD制备及服役过程界面扩散行为研究

项目编号： No.51202088

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 无机非金属材料学科

项目作者： 赵德刚

作者单位： 济南大学

项目金额： 25万元

中文摘要： 填充或掺杂的方钴矿热电材料（CoSb3）被认为是最具有应用前景的中温热电发电材料之一，而方钴矿热电材料在高温容易发生氧化或Sb原子的挥发，因此方钴矿热电材料的防护涂层封装是热电器件应用的关键基础问题之一。本项目拟采用电子束物理气相沉积（EB-PVD）方法在方钴矿表面沉积致密的YSZ（Y2O3稳定的ZrO2）等轴晶涂层，揭示方钴矿基体上YSZ等轴晶薄膜的形核生长规律，重点研究服役条件和加速实验下方钴矿热电材料中的Sb原子的扩散动力学以及YSZ涂层界面的阻扩散机制，分析涂层界面微结构演变及相变析出规律，探明YSZ防护涂层的微观损伤机制，建立具有明确物理意义且适用于方钴矿YSZ防护涂层的寿命预测理论，为方钴矿基热电发电器件的制备应用奠定基础。本项目有利于提升我国在方钴矿热电材料领域的研究水平，且适应国家能源综合利用的发展需求，其立项实施将具有重要的战略和理论意义。

中文关键词： 方钴矿；YSZ薄膜；钛薄膜；热电器件；

英文摘要： Filled or doped CoSb3-based skutterudite is regarded as one of the most promising material working at intermediate temperature region. However, the antimony of CoSb3 material is vulnerable to be oxided or sublimed at elevated temperature. How to prepare the protective coating and suppress the sublimation is one of the key issues for the application of CoSb3-based thermoelectric device. Yttria (Y2O3)-stabilized zirconia (ZrO2) coating for skutterudite thermoelectric materials prepared by electron beam physical vapor deposition (EB-PVD) process will be carried out in this project. The nucleation and growth of YSZ equiaxed crystal thin film on the skutterudite subtrate will be studied. The diffusion kinetics of Sb in the skutterudite and interfacial diffusion barrier mechanism of YSZ coating in the service condition and accelerated tests will be emphatically investigated. By analyzing the interfacial evolution and the precipitation of phase transition at the interface of coating during the period of serving and accelerated tests, the micro-damage mechanism of YSZ coating for skutterudite is expected to be understood, which is helpful to establish the life prediction theory with a clear physical meaning for the YSZ coating of CoSb3-based thermoelectric device. This project can lay a foundation for the application of

英文关键词： CoSb3；YSZ film；Ti film；thermoelectric device；