基于碳纳米管的三维集成电路硅通孔互连线的建模与仿真

项目名称： 基于碳纳米管的三维集成电路硅通孔互连线的建模与仿真

项目编号： No.61204041

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 信息四处

项目作者： 梁锋

作者单位： 电子科技大学

项目金额： 28万元

中文摘要： 三维集成电路是微电子产业发展的主要趋势，具有巨大的潜在应用价值。硅通孔互连是实现三维集成的关键技术。传统金属或多晶硅填充的硅通孔互连线面临诸多挑战，而碳纳米管互连则具有优越的电学、热学和机械特性。本项目以基于碳纳米管的三维集成电路硅通孔互连线为研究对象，拟结合电磁学、电路及量子输运的基本理论，研究碳纳米管硅通孔互连线的寄生电学参数提取、等效电路和热特性建模以及信号完整性分析，重点解决碳纳米管硅通孔互连线的电-热耦合效应模拟、信号完整性仿真与设计优化等对三维集成电路发展起关键作用的问题，创建适用于计算机辅助设计的碳纳米管硅通孔互连模型知识库。本项目旨在用理论与数值模拟的手段研究并揭示三维集成电路中碳纳米管硅通孔互连线的温度分布和电信号传播规律，为实际制备碳纳米管硅通孔互连线提供理论指导，为开发三维集成电路计算机辅助设计工具奠定一定的理论和技术基础。

中文关键词： 硅通孔；互连线；三维集成；寄生参数提取；等效电路模型

英文摘要： Three-dimensional (3D) integrated circuit (IC) is the development direction of microelectronics industry and will have a wide range of applications in the near future. Through-silicon via (TSV) interconnect is the key technique to implement 3D integration. However, lots of challenges emerge in conventional metal or polysilicon filling TSV interconnects. Carbon nanotubes have been proved to be a good candidate material for on-chip interconnects in nanoscale ICs, due to their excellent electrical, thermal, and mechanical characteristics. In this proposal, we propose to use bundles of carbon nanotubes as the TSV interconnects in 3D ICs. Based on the basic theories of electromagnetics, circuit, and quantum transport, the parasitic-parameter extraction, equivalent circuit and thermal model, and signal integration of carbon nanotube-based TSV interconnects will be investigated. The key scientific problems including electro-thermal coupling modeling, simulation of signal integration, as well as configuration design and optimization for carbon nanotube-based TSV interconnects will be solved in the project. After that, an equivalent model library suitable for computer aided design (CAD) will be set up. The purpose of this project is to study and reveal the principles of temperature distribution and signal propagation in

英文关键词： Through-silicon vias；interconnects；three-dimensional integration；parasitic parameter extraction；equivalent circuit model