超宽带隙透明导电薄膜的制备和MgZnO日盲紫外探测器面阵的制备

项目名称： 超宽带隙透明导电薄膜的制备和MgZnO日盲紫外探测器面阵的制备

项目编号： No.61306065

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 无线电电子学、电信技术

项目作者： 郑清洪

作者单位： 福建农林大学

项目金额： 25万元

中文摘要： 面阵日盲紫外探测器在高压电网电晕监测、导弹预警等领域具有重要应用前景，是目前国民经济和国防建设急需的器件。MgZnO合金薄膜带隙调控范围大(3.3-7.8 eV)，具有优良的光电响应特性，是制备日盲紫外探测器的首选材料之一。然而，由于稳定的p型ZnO基薄膜材料制备困难，无法制备p-i-n垂直结构ZnO基探测器。目前报道的ZnO基探测器都是平面叉指式结构，无法实现面阵化，制约了器件的进一步发展。本申请提出一种无需p型ZnO基材料制备MgZnO面阵日盲紫外探测器的方法。该方法的核心在于能够制备出Al掺杂的高导、高日盲紫外光透过的MgZnO透明导电薄膜。申请者提出了通过两步法来制备关键性材料，并在此基础上制备背照式垂直结构的MgZnO日盲紫外探测器，进一步探索制造MgZnO日盲紫外探测器焦平面面阵器件。

中文关键词： MgZnO；透明导电薄膜；日盲紫外探测器；面阵；垂直结构

英文摘要： Focal plane solar-blind ultraviolet photodetector (SBPD) has attracted much attention for applications to electronic spark monitoring and missile warning systems. MgZnO film is a promising material for fabricating SBPD, as it has wide band-gap range tuning from 3.3 to 7.8 eV and high optoelectronic responsivity. However, it is hard to obtain stable p-type ZnO based film, as a result, fabrication of p-i-n SBPD with vertical structure is still a problem. So far, all reported ZnO based SBPDs are planar metal-semiconductor-metal structure, which can not be assembled to focal plane arrays. In this project, a new type SBPD without p-type ZnO based material is proposed to realize the fabrication of MgZnO SBPD focal plane arrays. Fabrication of high conductivity Al doped MgZnO film with high transmittance in the solar-blind spectral range is the key issue of our project. We try to prepare the key material by a two-step process and then fabricate backilluminated vertical structure MgZnO SBPD. Further, MgZnO backilluminated solar-blind focal plane arrays can be obtained.

英文关键词： MgZnO；Transparent conducting film；Solar-blind ultraviolet detector；Array；Vertical structure