W波段InAlN MOS-HEMT材料制备及物性研究

项目名称： W波段InAlN MOS-HEMT材料制备及物性研究

项目编号： No.61306017

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 无线电电子学、电信技术

项目作者： 张金风

作者单位： 西安电子科技大学

项目金额： 29万元

中文摘要： W波段InAlN/GaN HEMT器件中，栅长减小到几十纳米，为了使器件等比例缩小，同时抑制短沟道效应和栅漏电，InAlN/GaN异质结材料结构需要引入AlGaN或InGaN背势垒结构，将势垒层减薄到10nm以下，并采用MIS栅结构。不仅材料尺寸和结构要合理，频率性能还与材料缺陷和陷阱态密切相关，对材料和介质制备提出很高的要求。本项目将采用我们提出的增强氮化物材料的原子结合和二维生长模式的脉冲MOCVD方法实现高质量InAlN势垒层的生长，探索新型复合AlGaN背势垒结构对InAlN/GaN异质结生长和物性的影响机理，研究表面介质对材料的表面状态、输运性质和器件的栅漏电、瞬态特性等的影响机理，最终获得栅沟距离（即介质和势垒层总厚度）低于10nm、室温和600K迁移率分别高于1400和400cm2/Vs、MIS电容反向漏电流低于1mA/cm2、适用于W波段的InAlN MOS-HEMT材料。

中文关键词： InAlN/GaN；高电子迁移率晶体管；背势垒；高k介质；

英文摘要： In W-band InAlN/GaN HEMT devices, the gate length is shrunk to tens of nanometers. In order to restrain the short channel effect and gate leakage current in the scaling-down devices, it is needed to introduce a AlGaN or InGaN back barrier, to thin the barrier layer to sub-10nm, and adopt a MIS-type gate structure. The high frequency characteristics not only depend on a reasonable layered-structure and small dimensions of the heterojunctions, but also show high sensitivity to material defects and traps, leading to great challenges to material growth and insulator deposition. It is proposed to grow InAlN/GaN heterojunctions by pulsed MOCVD method which is efficient in promoting the atom incorporation and two-dimensional layer-by-layer growth mode in the growth of group-III nitride materials, to investigate the effect of a novel multiple AlGaN back barrier structure on the growth and material property of InAlN/GaN heterojunctions, and to figure it out how the surface insulator works on the surface state and transport property of the heterojunction materials, and on the gate leakage and transient property of the HEMT devices. The goal is to realize the InAlN/GaN heterojunctions suitable for W-band MOS-HEMT devices, which features a sub-10nm distance between gate and channel, a electron mobility not less than 1400cm2

英文关键词： InAlN/GaN；HEMT；back barrier；high-k dielectrics；