表面等离激元增强AlGaN基深紫外LED研究

项目名称： 表面等离激元增强AlGaN基深紫外LED研究

项目编号： No.61274038

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 无线电电子学、电信技术

项目作者： 黎大兵

作者单位： 中国科学院长春光学精密机械与物理研究所

项目金额： 86万元

中文摘要： AlGaN基深紫外LED在杀菌消毒、生化探测、聚合物固化、非视距通讯等领域有着巨大的应用前景，但是AlGaN基深紫外LED发光效率低下是制约其发展和应用的关键。本课题拟在高温金属有机物气相沉积法制备出高质量AlGaN基LED结构材料的前提下，提出采用表面等离激元增强AlGaN 基深紫外LED的内量子效率，进而来提高深紫外LED的效率。采用理论计算和实验相结合，深入研究电磁场在金属微纳结构中的局域和传输特性，探索表面等离子体的共振增益因子、共振频率、模式体积等特征参数，掌握不同种类、形态、密度、大小的金属粒子形成的表面等离子体共振对AlGaN基深紫外LED发光激发速率和辐射发射速率的影响，建立表面等离激元与AlGaN基深紫外LED光子耦合模型，揭示表面等离激元增强AlGaN基深紫外LED发光效率机制，最终研制成功基于表面等离激元增强的高效率发光的AlGaN基深紫外LED。

中文关键词： AlGaN；LED；等离激元；深紫外；

英文摘要： AlGaN-based deep ultraviolet light-emitting diode(DUV-LED) has huge promising applications in the field of sterilization, chemical and biological detection, polymer curing, non-line-of-sight communications, the lower luminous efficiency of the AlGaN-based DUV-LED is the key to restrict its development and applications. In this project, in the term of growth of high crystalline AlGaN-based DUV-LED structurial materials by high-temperature metal-organic chemical vapor deposition, it is proposed that surface plasmon will be employed to enhance the internal quantum efficiency of the AlGaN-based DUV-LEDs, and thus to improve its efficiency. Combinating theoretical calculations and experiments,we will deeply study the localization and transmission characteristics of electromagnetic field in the metal micro-nano structures, and widely explore the characteristic parameters of the surface plasmon, such as resonant gain factor, resonant frequency, mode volume and so on. Furthermoe, it will be mastered that the effect of the surface plasmon resonance under the different types, shape, density and size of metal particles on the light excitation rate and radiative emission rate of AlGaN based DUV-LED. The coupling model between the surface plasmon and photon in AlGaN-based DUV LED will be establized and the related mechanism

英文关键词： AlGaN；LED；Surface Plasmon；Ultraviolet；