无结围栅纳米线MOSFET的短沟道效应研究

项目名称： 无结围栅纳米线MOSFET的短沟道效应研究

项目编号： No.61204092

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 信息四处

项目作者： 李聪

作者单位： 西安电子科技大学

项目金额： 28万元

中文摘要： 无结围栅纳米线（JSNW）MOSFET具有工艺简单，噪声水平低，亚阈值特性好以及沟道迁移率受栅压影响小等优点，是目前国际上研究的热点。然而，随着器件沟道长度缩小到纳米量级，短沟道效应对JSNW MOSFET的影响不能忽略。本课题拟采用理论建模、数值模拟和工艺实验相结合的方法，研究JSNW MOSFET短沟道效应的物理机理，并建立考虑量子限制效应及迁移率退化效应的二维解析模型，从而分析异质栅（DMG）结构以及横向非对称沟道（LAC）结构对JSNW MOSFET器件短沟道效应的影响，进而提出相应的JSNW MOSFET器件结构优化方案。此外，为了从实验角度间接验证本课题所提出的理论模型及器件结构优化方案，拟基于平面体硅工艺制备平面无结MOSFET器件及具有DMG和LAC结构的平面无结MOSFET器件。本课题研究结果将为制备高性能JSMW MOSFET器件奠定理论基础并提供工艺指导。

中文关键词： 无结；围栅；短沟道效应；异质栅；解析模型

英文摘要： Recently, junctionless surrounding gate nanowire (JSNW) MOSFET has attracted many attentions for its relatively simpler process, lower noise amplitude, better subthreshold characteristics and less mobility variation as gate bias changed. As channel length shrinking into nanoscale, influence of short channel effects (SCE) on JSNW MOSFET cannot be neglected. In this project, both analytical modeling, numerical simulation and technology experiment will be employed to investigate the mechanism of SCE. Two-dimensional analytical models considering quantum confinement effect and mobility degradation effect will be derived to analyze the influences of dual-material gate (DMG) structure and lateral asymmetric channel (LAC) doping profile on SCE of JSNW MOSFET. Subsequently, optimization of DMG and LAC for JSNW MOSFET will be presented. In order to experimentally demonstrate the validity of proposed analytical models and optimized structure for JSNW MOSFET, planar junctionless MOSFET and planar junctionless MOSFET with DMG/LAC structure will be fabricated based on planar bulk technology. This project will provides not only physical insight into JSNW MOSFET, but also flexible process choices for optimizing the performance of conventional JSNW MOSFET.

英文关键词： Junctionless；Surrounding gate；Short-channel effects；dual-material gate；analytical model