一种运用键合技术的全新3D集成封装方法核心工艺的研究

项目名称： 一种运用键合技术的全新3D集成封装方法核心工艺的研究

项目编号： No.61306095

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 无线电电子学、电信技术

项目作者： 范继

作者单位： 华中科技大学

项目金额： 25万元

中文摘要： 随着移动通讯和高性能计算机的发展，现有的2D集成技术已经严重制约了器件微型化以及系统运行速度的提升。而3D集成封装技术在微型化方面拥有巨大的优势，并且3D集成技术使得器件之间的连线将变得更短，系统的运算速度也将得到前所未有的提升，同时能耗与延时也将大大地降低。近年来，键合技术作为一种行之有效的方法，在3D集成封装领域得到了前所未有的关注。虽然现阶段键合技术结合硅通孔技术作为实现芯片之间互联的最新技术，正在3D集成封装技术中被广泛的研究，但其高昂的价格以及其复杂的制造工艺也制约它被大规模应用。本课题将提出一种低成本的3D集成封装设计，此设计拟采用铜铜扩散键合为主要集成封装技术把微电子器件封装其中，控制封装后的漏气率小于5e10-8atm.cm^3/s。封装中运用大马士革工艺实现芯片之间互联技术，每个结点的阻值控制在毫欧量级。由于整个工艺中未涉及硅通道技术，因此这种工艺的造价将相对低廉。

中文关键词： 键合技术；气密封装；互联技术；MEMS加速度计；

英文摘要： In order to keep up with the needs of the astonishing development in the functionality of portable devices and of computational systems, integration technology has been investigated over the past three decades. Further requirements on form factor reduction, performance improvement, and heterogeneous integration will make three-dimensional integration a plausible choice as the next generation of microsystem manufacturing technology, as it can provide an excellent connection density higher than 10e4/mm2 for developing "More than Moore" scaling. In recent years, bonding technology has become a very important packaging and integration technology for the realization of three-dimensional integrated circuits (3DICs). The 3D integration can be achieved by a combination of bonding and through-silicon via (TSV). However the complicated fabrication process and high cost are defined as the bottlenecks in industry application. This subject intends to propose an innovative low-cost and simple technical process for 3D integration and packaging. The research work will concentrate on developping and optimizing the new integration (or packaging) technology. The Cu damascene process will be used as the interconnection technology in 3D integration/packaging. The contact resistances are estimated on the oder of 10^(-3)Ohm. In consid

英文关键词： Bonding Technology；Hermetic packaging；interconnection；MEMS accelerometer；