By imitating the synaptic connectivity and plasticity of the brain, emerging electronic nanodevices offer new opportunities as the building blocks of neuromorphic systems. One challenge for largescale simulations of computational architectures based on emerging devices is to accurately capture device response, hysteresis, noise, and the covariance structure in the temporal domain as well as between the different device parameters. We address this challenge with a high throughput generative model for synaptic arrays that is based on a recently available type of electrical measurement data for resistive memory cells. We map this real world data onto a vector autoregressive stochastic process to accurately reproduce the device parameters and their cross-correlation structure. While closely matching the measured data, our model is still very fast; we provide parallelized implementations for both CPUs and GPUs and demonstrate array sizes above one billion cells and throughputs exceeding one hundred million weight updates per second, above the pixel rate of a 30 frames/s 4K video stream.
翻译:通过模仿大脑的合成连通性和可塑性,新兴电子纳米装置提供了新的机会,作为神经形态系统的构件。基于新装置的计算结构大规模模拟的一个挑战就是准确捕捉设备反应、歇斯底里、噪音和时间域以及不同设备参数之间的共变结构。我们以基于抗体记忆细胞最近获得的电测量数据类型的合成阵列的高通过量基因化模型来应对这一挑战。我们将这个真实的世界数据映射到矢量的自动反向切换工艺上,以准确复制设备参数及其交叉曲线结构。在与所测量的数据密切匹配的同时,我们的模型仍然非常快;我们为CPU和GPU提供平行的实施,并展示超过10亿个细胞和超过1亿个分秒的光量和吞吐量,高于30个框架/4K视频流的像素率。