We investigate the problem of identifying discontinuous doping profiles in semiconductor devices from data obtained by the stationary voltage-current (VC) map. The related inverse problem correspond to the inverse problem for the Dirichlet-to-Neumann (DN) map with partial data.
翻译:我们调查从固定电压流(VC)地图获得的数据中找出半导体装置中不连续剂量剖面的问题,与此相关的反向问题与Drichlet-to-Neumann(DN)地图中带有部分数据的反向问题相对应。