p-ReSe2/n-ReS2二维异质结的气相控制合成及其各向异性光电性能研究

项目名称： p-ReSe2/n-ReS2二维异质结的气相控制合成及其各向异性光电性能研究

项目编号： No.91622117

项目类型： 重大研究计划

立项/批准年度： 2017

项目学科： 数理科学和化学

项目作者： 翟天佑

作者单位： 华中科技大学

项目金额： 80万元

中文摘要： 二维pn结是提升半导体器件集成度的重要发展方向之一。然而，由于目前二维半导体材料，尤其是p型材料的种类稀少，二维pn结的研究进展缓慢。ReS2是过渡金属硫属化合物家族中通过化学气相沉积（CVD）方法最新制备的二维n型半导体，有意思的是，其同族化合物ReSe2却为p型半导体。更为有趣的是，ReS2和ReSe2因晶体结构中存在牢固的Re4团簇链而具备各向异性的性质。本项目拟通过CVD法制备p-ReSe2/n-ReS2面间或面内异质结，并对其各向异性性能，尤其是光电性能开展系统研究。二维材料及其异质结的CVD生长，将主要通过调节生长参数，如生长源，温度，衬底以及生长流程等来实现。异质结的各向异性性能研究将基于光电子器件以及空间/时间分辨光电测试系统开展。p-ReSe2/n-ReS2异质结的CVD法可控制备与性质研究，将为未来大规模各向异性二维pn结器件的研究与应用提供基础。

中文关键词： 二硫化铼；二硒化铼；pn结；化学气相沉积；各向异性

英文摘要： Construction of pn junction based on two dimensional (2D) materials is one of main stream strategies for improving the integration density of devices. However, limited by the deficiency of p-type 2D semiconducting materials, the study on 2D pn junction is developing slowly. ReS2 is the youngest member among CVD-grown TMDs which is n-type semiconductor. Interestingly, ReSe2 is identified to be p-type semiconductor. More importantly, both ReS2 and ReSe2 have Re4 cluster chain in their lattice plane which renders them anisotropic properties. Therefore, this project is designed to synthesize p-ReSe2/n-ReS2 in-plane or out-of-plane heterojunctions via CVD method and then take a systematically study on the anisotropic properties, especially for (opto)electronic properties, of such a pn heterojunction. The CVD growth of 2D ReS2, ReSe2 and their heterojunction will be conducted by optimization of growth conditions including source, temperature, substrate and growth procedure, etc. Moreover, the anisotropic properties of p-ReSe2/n-ReS2 heterojunction will further be studied by electronic/optoelectronic devices and spatial/time-resolved optoelectronic measurement system. We expect that the studies on CVD growth of p-ReSe2/n-ReS2 heterojunction and its anisotropic properties would pave the way for the research and application of large-scale, anisotropic 2D pn junction based devices in future.

英文关键词： ReS2;ReSe2;pn junction;chemical vapor deposition;anisotropic