基于间隙N调控的p-ZnO:In-N薄膜导电稳定性研究

项目名称： 基于间隙N调控的p-ZnO:In-N薄膜导电稳定性研究

项目编号： No.51472038

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 一般工业技术

项目作者： 孔春阳

作者单位： 重庆师范大学

项目金额： 83万元

中文摘要： ZnO具有良好的热稳定性、化学稳定性、抗辐射性和环境友好性，在紫外发光及激光器件等研究方面取得巨大的进展。但p型ZnO的稳定性仍是制约ZnO基光电器件大规模应用的瓶颈。本项目采用射频磁控溅射和N离子注入制备ZnO:In-N薄膜，研究ZnO:In-N薄膜p型转变随退火温度和时间的变化规律；通过剩余间隙N调控，提高p型ZnO:In-N薄膜质量和导电稳定性；改变外界环境变量（温度、光照等）进行p型稳定性耐受实验，研究p-n结整流和电致发光特性。采用第一性原理计算p型ZnO:In-N薄膜中N的扩散势垒和不同扩散路径鞍点处的能带结构、主要施主缺陷（Zni、Vo、(N2)o）的形成能等，研究剩余间隙N及主要施主缺陷行为和p型ZnO:In-N薄膜导电稳定性的关系，给出影响p型ZnO:In-N薄膜导电稳定性的机理,旨在为制备高质量、可重复、高稳定性的p型ZnO:In-N薄膜提供有效途径和重要参考。

中文关键词： p型氧化锌；电学稳定性；间隙N；第一性原理

英文摘要： ZnO with good thermal stability, chemical stability, radiation resistance and friendly environment, has achieved great development of homogeneous UV luminescence and laser devices. However, the instability of p-type ZnO is still the bottleneck of restricting the ZnO based optical devices from large-scale application. We investigate the effect of annealing temperature and time on p-type changes of the ZnO:In-N thin film prepared by radio frequency magnetron sputtering together with the direct N implantation of acceptor dopants. The quality and stability of p-type conductivity of ZnO:In-N thin film can be further improved through remaining interstitial N regulation. Moreover, tolerance test of p-type conductive stability is designed to be taken by the external environment variables (temperature, illumination etc.). The p-n homojunctions of ZnO should be fabricated in order to research on the characteristics of the good rectification and the electroluminescence. Based on the first-principles theory, the calculations of the energy barrier of N diffusion, the energy band structure of ZnO:In-N at the saddle point in N different diffusion path, and formation energy such as the defect of Zni, Vo, (N2)o are performed. By investigating the effects of interstitial N and the major donor defect behavior on the stability of p-type conductivity, the conductive mechanism should be illustated explained. The aim of the extensive researches above is to provide an important reference and effective way for the fabrication of good quality, high stability of p-type ZnO.

英文关键词： p-type ZnO;electrical stability;interstitial N;first-principles