SOI横向pin二极管等离子可重构天线关键技术研究

项目名称： SOI横向pin二极管等离子可重构天线关键技术研究

项目编号： No.61474085

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 无线电电子学、电信技术

项目作者： 胡辉勇

作者单位： 西安电子科技大学

项目金额： 84万元

中文摘要： 随着雷达系统的快速发展，传统金属天线体积大、自重构性差等不利因素越来越突出，制约了其性能的进一步提高，而利用等离子体作为电磁辐射导向媒质的等离子天线为其发展提供了新动力。本项目拟采用SOI横向pin二极管构建可重构天线，其具有工作频段切换灵活、辐射方向范围宽、体积小、且与微电子工艺兼容、可实现频率与方向同时调节等众多优势，可为雷达与通信系统性能的提升提供了一条有效的技术途径。 然而，基于SOI横向pin二极管构建等离子可重构天线的相关基础理论仍需探索、部分关键技术仍未突破。因此，本项目拟重点研究SOI横向pin二极管表面等离子体微波传输特性及其演化规律等关键基础理论，探索SOI横向pin二极管阵列可重构天线结构和实现天线快速动态重构的控制算法，提出天线结构与其性能的相关性，突破其制备的关键工艺技术，研制出天线结构原理样品，为高性能新型可重构天线的设计与应用提供理论与实践基础。

中文关键词： 绝缘体上硅；横向pin二极管；等离子体；可重构天线

英文摘要： Plasma antenna is widely studied in recent years, regarded as a substitute for traditional metal antenna, overcoming the disadvantages of poor self-reconfigurability. Lateral pin diode fabricated on SOI substrate can be used as such antenna, since carriers in the intrinsic region of pin diode can be treated as plasmon, attracting lots of research interests. However, the basic theory and fabricating technologies of such kind of plasma antenna is still lacking. This project is proposed to solve the problems above. In this project, the control algorithm to achieve the fast dynamic reconfiguration of plasma antenna based on lateral pin diode on SOI substrate, and the relationship between the concentration of surface plasmon in lateral pin diode and its key microwave parameters will be established, to improving the basic theory of the interaction between electromagnetic and microwave characteristics. The correlation between key process and structure of antenna will be explored, to optimizing the structure of pin diode using for antenna. Then, the sample of this kind of plasma antenna will be obtained. This project can provide valuable reference for the design and application of the plasma antenna based on lateral pin diode on SOI substrate.

英文关键词： Silicon-On-Insulator;Lateral pin Diode;Plasme;Reconfigurable Antenna