项目名称: 基于p-Cu2O帽层的增强型硅基AlGaN/GaN异质结场效晶体管的制备及可靠性研究
项目编号: No.61504083
项目类型: 青年科学基金项目
立项/批准年度: 2016
项目学科: 无线电电子学、电信技术
项目作者: 刘新科
作者单位: 深圳大学
项目金额: 22万元
中文摘要: 硅基AlGaN/GaN heterojunction field effect transistors (HFETs), 具有能量消耗低和模块体积小的特点,已经成为了国内外功率器件的研究热点。本项目创新性的提出采用p型Cu2O帽层,与n-AlGaN形成p/n结来耗尽栅极沟道的二维电子气(2-DEG),实现CMOS兼容的增强型硅基AlGaN/GaN HFETs。本项目以AlGaN/GaN HFETs的器件模拟仿真为指导,展开器件的制备和物理分析。采用脉冲激光沉积技术,通过N2等离子体掺杂技术解决p-Cu2O空穴浓度低的问题; 使用氧化物等钝化技术解决Cu2O/AlGaN异质结界面态的问题。通过对增强型硅基AlGaN/GaN HFETs的器件分析和物理研究,建立动态电流崩塌效应、高场退化等机理模型,并提出相应的解决方案。本项目的研究结果对实现硅基氮化镓器件在电力电子转化系统中的应用具有重要意义
中文关键词: 氮化镓;增强型;异质结场效晶体管;氧化亚铜;可靠性
英文摘要: Due to the low power loss and small module size, GaN-on-silicon AlGaN/GaN heterojunction field effect transistors (HFETs) have worldwide become a prevalent research topic in power electronics. Through this project, we propose an innovative method of realizing CMOS-compatible E-mode GaN-on-silicon AlGaN/GaN HFETs using a p-Cu2O cap layer, which forms a p/n junction with the underlying n-AlGaN barrier layer and further deplete the two dimensional electron gas (2-DEG) in the channel under the gate. With device simulation as a guide, the fabrication and characterization of AlGaN/GaN HFETs will be carried out. P-Cu2O layer with high carrier (hole) concentration will be achieved by exploring N-doping technique through a pulsed laser deposition tool; high quality interface at Cu2O/AlGaN heterojunction could be obtained by passivation technique using oxide materials. Physical modes for current collapse, degradation under high temperature and high field will be built up for p-Cu2O/AlGaN/GaN HFETs, and specific solutions will be provided in this project. The work done in this project will have a great value for realizing GaN-on-silicon AlGaN/GaN HFETs in the power conversion application.
英文关键词: Gallium Nitride;E-mode;heterojunction field effect transistors;Cu2O;Reliability