硅衬底上III-V族异质结材料生长机制和HEMT器件制备研究

项目名称： 硅衬底上III-V族异质结材料生长机制和HEMT器件制备研究

项目编号： No.61474031

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 无线电电子学、电信技术

项目作者： 李海鸥

作者单位： 桂林电子科技大学

项目金额： 89万元

中文摘要： 本项目主要开展硅衬底上III-V族半导体材料异质生长机制、深亚微米硅基高电子迁移率晶体管（HEMT）器件制备和器件模型等方面研究。研究硅衬底/III-V族半导体材料之间由于晶格常数大失配等引起的位错、缺陷和生长质量不高等关键问题。研究硅衬底缓冲层生长技术对HEMT材料的晶体质量和界面特性的影响，通过优化Si/III-V族半导体外延层的生长条件，总结高低温生长、间断生长和超晶格结构对外延材料缺陷的产生和阻断的影响规律，最终获得一整套在硅基上外延生长III-V族半导体的技术解决方案。研究纳米尺度硅基HEMT器件的隧穿效应、非平衡载流子的弹道输运以及微观统计引起的涨落等现象，采用Hydrodynamic与Monte Carlo模拟方法研究纳米尺度、飞秒量级下载流子输运规律，建立准确描述超高频、纳米尺度半导体器件的物理模型，为实现电子器件由吉赫兹向太赫兹发展提供理论基础。

中文关键词： 高电子迁移率晶体管；微波器件；半导体器件；宽禁带半导体；微波毫米波

英文摘要： This project is focused on the hetero-structure material growth of III-V semiconductor layer based on silicon substrate, the fabrication of the deep submicron silicon-based high electron mobility transistor (HEMT) devices and the model of devices. The dislocation and defects formation of silicon/III-V semiconductor materials due to larger lattice constant mismatch and the growth mechanism will be studied as the key research. The growth technique of the buffer layer will be investigated, which have much effects on the HEMT material crystal quality and interface characteristics between different epi-layers. By optimizing the growth conditions of silicon/III-V semiconductor epitaxial layer, we will summarize the law of high and low temperature eip-layer growth, the discontinuous growth and super-lattice structure, which influence the defects and blocking of epitaxial material. It is finally to obtain the solution of epitaxial growth of III-V semiconductors based on silicon substrate. To research the tunneling effect of nano-scale HEMT devices based on silicon substrate, the ballistic transport of non-equilibrium carriers and the fluctuation phenomenon caused by micro statistics. Using Hydrodynamic and Monte Carlo approaches to simulate the carrier transport rules of the nano-scale, femtosecond conditions, to establish an accurate physical model describing the UHF, nanoscale semiconductor devices, and provide theory in order to realize the electronic device developed by Gichz to the THz.

英文关键词： High electron mobility transistor;Microwave devices;Semiconductor device;Wide band gap semiconductor;Microwave and millimeter wave