Yb离子和Ce离子共掺以增强GaN:Er微纳米晶发光性能的研究

项目名称： Yb离子和Ce离子共掺以增强GaN:Er微纳米晶发光性能的研究

项目编号： No.61306004

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 无线电电子学、电信技术

项目作者： 王晓丹

作者单位： 苏州科技学院

项目金额： 25万元

中文摘要： GaN:Er材料可以发射出537nm的绿光和1.54μm波段的红外光，在平板显示、光通讯等领域有重要的应用前景。但Er离子的光吸收截面小导致发光强度弱，在一定程度上制约了GaN:Er材料和器件的发展。Yb离子在980nm波段具有较大的吸收截面，能和Er离子形成有效的能量传递。Ce离子则被证明在低声子能量材料中可以增强Er离子在1.54μm的发光。前期我们成功设计制备了Yb,Er,Ce三元掺杂的GaN纳米晶，相对于Er单元掺杂的GaN纳米晶，537 nm和1.54μm的发光强度分别提高了约10倍和5倍，部分工作已于近期获得发明专利授权，但制备条件、掺杂浓度、配比和发光机制等还需进一步研究。我们拟在此基础上，进一步优化制备条件，研究上述稀土离子之间浓度、配比等对材料结晶质量、发光性能的影响机制；研究稀土离子和GaN本征缺陷之间的能量传递机制,最终获得具有高发光性能的GaN微纳米晶。

中文关键词： 氮化镓；稀土；铒；发光；

英文摘要： Er-doped GaN can emit green light(537nm) and infrared light(1.54 μm) and is a potential material applied in display, optical communications.However, the absorption cross section of Er ion is too small, which inhibits the research and development of Er-doped GaN related devices. Yb ions have large absorption cross section and can transfer the energy to Er ions efficently. Ce ions have been proved to enhance the 1.54 μm luminescence and tune the intensiy ratio of 537 nm luminescence and 1.54μm luminescence. Recently, we have codoped Er ions, Yb ions and Ce ions in GaN nanocrystal sucessfuly. Compared with Er-doped GaN crystal, the luminescent intensity of 537 nm and 1.54 μm was enhanced 10 and 5 times, respectively. This work has been patented recently.The doping concentration, preparation process and luminescence mechanism need further investigation. Based on this work, we will improve the preparatin process, control the doping concentration,and invesitgate the effects of concentration and ratio of Yb, Er,and Ce ions on crystallinity and luminescence of GaN nanocrystals. Furthermore we will research the energy transfer mechanism between rare earth ions and native defects. Our aim is to obtain Er-doped GaN nanocrystals with excellent luminescence performance.

英文关键词： GaN；Rare earth；Erbium；Luminescence；