SiC MOSFET功率器件高速驱动研究

项目名称： SiC MOSFET功率器件高速驱动研究

项目编号： No.61504101

项目类型： 青年科学基金项目

立项/批准年度： 2016

项目学科： 无线电电子学、电信技术

项目作者： 张艺蒙

作者单位： 西安电子科技大学

项目金额： 25万元

中文摘要： 为了提高能源的利用效率，降低CO2排放量，提高电力转换效率是一个非常重要的研究方向。相比于传统的硅基功率器件，碳化硅功率器件有着非常明显的优越性。本项目针对SiC MOSFET功率器件的驱动电路进行研究，以提升其在高速开关电路应用中的性能。本项目主要进行降低器件在高速开关下SiC MOSFET功率器件开关损耗的机理研究，降低电路过冲电压/过冲电流的机理研究，以及降低功率器件EMI干扰的机理研究，对采用SiC MOSFET功率器件开关电路的设计具有重要意义。本项目将建立器件和驱动模块的数值仿真模型，对驱动电路提出新的设计方法，制作出样机并进行测试。最终制作的样机能够使SiC MOSFET在1MHz的开关频率下实现高效率工作。

中文关键词： 碳化硅；金属氧化物半导体场效应晶体管；高速驱动电路；过冲电压；电磁干扰

英文摘要： In order to promote the efficiency of energy utilization and reduce the carbon emission, promoting the electricity power transformation efficiency is an important research direction. Comparing with conventional silicon based power devices, silicon carbide power devices have extraordinary advantages. This project is going to research on driver of SiC MOSFET power device, and the target is promoting its performance in high speed switch application. In the research, we mainly focus on mechanism of reducing switching loss of SiC MOSFET device in high speed switching operation, mechanism of reducing overshoot voltage and current, and mechanism of reducing EMI interference during high speed operation, and the research conclusion is significant to switching circuits with SiC MOSFET power devices. We are going to establish numerical simulation models of SiC MOSFET power device and driver module, propose novel methodologies of circuit design, and manufacture prototypes for measurement, which can make sure the SiC MOSFET works at 1 MHz with high power transformation efficiency.

英文关键词： Silicon Carbide;MOSFET;High speed driver;overshoot voltage;EMI