Fe掺杂CuGaS2中间带薄膜材料的制备及光电特性

项目名称： Fe掺杂CuGaS2中间带薄膜材料的制备及光电特性

项目编号： No.61464009

项目类型： 地区科学基金项目

立项/批准年度： 2015

项目学科： 无线电电子学、电信技术

项目作者： 朱俊

作者单位： 内蒙古大学

项目金额： 46万元

中文摘要： 采用机械球磨或溶剂热分解合成微纳米颗粒前驱体料浆，经过压制、烧结和表面处理制备CuGaS2:Fe中间带薄膜。采用XRD、XPS、EDS、SEM、AFM以及Raman谱等测试方法分析监测样品在四个工艺环节的化学成分、相结构、晶粒尺寸、表面截面形貌以及薄膜均匀性和致密度等性质。调节Fe组分和CuGaS2基底材料化学计量比，通过光学测试和电学测试以及光电压谱和光电导谱等多种测试方法检验CuGaS2:Fe薄膜中是否形成杂质中间带。理论计算薄膜的电子态和杂质态，研究Fe杂质和电声子相互作用在光学吸收和电子输运过程中的作用。从实验和理论上探讨CuGaS2:Fe中间带薄膜的掺杂机制和光电性能优化条件，以便其有效应用于太阳电池的窗口层或吸收层，为研制相关薄膜太阳电池提供科学依据。

中文关键词： 杂质中间带；铁掺杂；薄膜；电子态；电声子相互作用

英文摘要： The micro- and nano- grain precursor paste is synthesized by mechanically milling or solvothermal decomposition. Afterwards, CuGaS2:Fe intermediate band thin films will be prepared by sequentially compacting, sintering and surface treatment of this precursor paste. The chemical ingredient, phase structure, grain size, morphology, uniformity and densification of the samples in the four technical processes will be analyzed and monitored by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), energy dispersive spectrometer (EDS), scanning electron microscopy (SEM), Atomic Force Microscope (AFM), Raman spectra, and so on. By adjusting Fe composition and the stoichiometry of CuGaS2 host material, whether there is an impurity intermediate band forming in a CuGaS2:Fe film will be verified by many test methods such as the optical and electrical measurements, photovoltage spectra and photoconductivity spectra, and so on. Electron states and impurity states of these films will be theoretically calculated to determinate the effect of Fe impurity and electron-phonon interaction in the process of optical absorption and electronic transport. The doping mechanism and the conditions for impoving the photoelectric performance of CuGaS2:Fe intermediate band thin films will be studied experimentally and theoretically for their effective application in window layers or absorbing layers of solar cells. It is expected that scientific evidences can be provided for the development of related thin film cells via this project.

英文关键词： impurity intermediate band;Fe doping;thin film;electron states;electron-phonon interaction