项目名称: 二氧化钛外延单晶薄膜的制备及其特性研究
项目编号: No.51472149
项目类型: 面上项目
立项/批准年度: 2015
项目学科: 一般工业技术
项目作者: 马瑾
作者单位: 山东大学
项目金额: 83万元
中文摘要: 二氧化钛的带隙宽度与氮化镓和氧化锌接近,物理化学性能稳定,是一种很有前途的宽禁带半导体材料。采用MOCVD方法生长金红石和锐钛矿晶型氧化钛单晶薄膜材料。用氧化锆、氧化镁、铝酸锶镧和R型氧化钛等单晶基片为衬底。系统地研究不同衬底上异质外延生长氧化钛薄膜的晶格适配和制备工艺,确定外延生长氧化钛单晶薄膜的最佳衬底材料(包括晶面取向)和制备工艺条件。研究同质外延生长氧化钛单晶薄膜的最佳工艺参数。制备出高质量的氧化钛单晶外延薄膜;研究纯氧化钛及其掺杂薄膜的晶格结构、缺陷、电光性质,包括电子输运、光吸收和光发射性质。弄清薄膜的外延关系和生长机制、能级跃迁和发光机制、掺杂机理和导电机制;尝试进行氧化钛基场效应薄膜晶体管的制备和性能研究。高质量的氧化钛外延单晶薄膜在透明电子器件、紫外探测器和透明电极等领域有着广阔的应用前景,对氧化钛单晶外延薄膜材料进行系统地研究,将为其在电子器件方面的实际应用奠定基础。
中文关键词: 二氧化钛;外延单晶薄膜;生长机制;掺杂;结构和光电性能
英文摘要: The band gap width of titanium dioxide (titania, TiO2) material is close to GaN and ZnO, and its physical and chemical properties are more stable, so TiO2 is a promising wide band gap semiconductor material. Rutile and anatase TiO2 single crystal film will be growth by Metal-organic chemical vapour deposition method. Zirconium oxide, magnesium oxide, LaSrAlO4 and R-type titanium dioxide etc. single crystalline wafer will be used as substrates. Crystal lattice match and the preparation process for heteroepitaxial growth of TiO2 films on different substrates will be investigated systemically, and the optimum substrate material (including crystal face orientation) and processing parameter for the epitaxial growth of single crystal TiO2 films will be determined. The optimum processing parameter for homogeneity epitaxial TiO2 films will be also studied. High quality single crystal TiO2 epitaxial films will be obtained; The crystal lattice structure, defects and optoelectronic properties for the pure and doped TiO2 films will be studied, including the electron transport, optical absorption and emission properties. The epitaxial relationship and growth mechanism, energy level transition and luminescence mechanism, doped mechanism and the conductive mechanism for the obtained films will be clarified; Try to study on the preparation of TiO2 based field effect TFT and its performance. High quality TiO2 epitaxial single crystalline films can be sued in many fields such as transparence electron devices, UV light detector and transparence electrode and so on. Systemic research for single crystal TiO2 epitaxial films will lay the foundation for the practical application of the material in electronic devices.
英文关键词: titanium dioxide;epitaxial single crystalline films;growth mechanism;doping;structure and opto-electrical properties