能被长波光激发的具有高的光催化氧化和还原活性材料的设计、制备及机制研究

项目名称： 能被长波光激发的具有高的光催化氧化和还原活性材料的设计、制备及机制研究

项目编号： No.51272081

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 一般工业技术

项目作者： 陈士夫

作者单位： 淮北师范大学

项目金额： 80万元

中文摘要： 发展能被长波光激发的、高量子效率的两种甚至多种半导体的复合光催化材料是构建新型光催化剂研究的主要方向。本项目以禁带宽度较小、导带底较负的半导体In2S3、AgInS2、g-C3N4及禁带宽度较小、价带顶较正的半导体WO3、FeOOH、Bi(OH)CrO4作为研究对象，重点研究上述两类半导体形成异质结的界面结构、组成等对不同光催化剂间光激电子-空穴复合的影响，阐明制备上述异质结光催化剂的最佳条件。通过对所制光催化剂的表面、晶体和电子结构、界面组成及原子或离子的化学状态、配位状态和表面元素分布等对光催化剂氧化和还原活性影响的系统研究，经过理论计算、进行关联分析，揭示异质结光催化剂中价带顶较正半导体的光激电子与导带底较负半导体的光激空穴复合的机制，阐明影响不同半导体间光激电子-空穴复合的本质规律。以上研究对丰富光催化的基础知识和半导体材料催化的反应特征都有重要的理论和实际意义。

中文关键词： 光催化材料；长波光；异质结；机制；

英文摘要： Developing high quantum efficiency and long wavelength-light activated composite photocatalyst via composition of two or more semiconductors is a main research direction to construct novel photocatalysts.In this project, two kinds of small band-gap semiconductors with low bottom of conduction band (LCB, such as In2S3, AgInS2 and g-C3N4) and high top of valance band (HVB, such as WO3, FeOOH, Bi(OH)CrO4) will be chosen as research object to prepare the composite photocatalysts. The research focuses on the effect of the sample's heterojunction interface structure formed between the two types of semiconductors and their content on the recombination of photoinduced electron and hole of the different semiconductors. The optimum conditions for the preparation of the samples will be determined.The recombination mechanism of the photoinduced electrons located in the semiconductor with HVB level between the photoinduced holes located in another semiconductor with LCB level will be revealed by means of (1) systematic investigations of the factors, including the photocatalysts' surface, crystal, and electronic structures, the interface composition, the chemical and coordination states of the composite atoms or ions,and the distribution of the surface elements, which affect the photocatalytic oxidation and reduction activiti

英文关键词： photocatalytic materials；long-wavelength light；heterojunction；mechanism；