项目名称: 半极性面GaN堆垛层错的形成机理和生长调控研究
项目编号: No.61204006
项目类型: 青年科学基金项目
立项/批准年度: 2013
项目学科: 信息四处
项目作者: 许晟瑞
作者单位: 西安电子科技大学
项目金额: 26万元
中文摘要: 半极性GaN材料可以消除80%的量子限制斯塔克效应,并且生长工艺窗口较大,是一种很有前景的宽禁带材料,是目前的研究热点。材料中的堆垛层错密度较高,严重制约材料和器件的性能。本项目从堆垛层错的产生机理角度来解决堆垛层错的问题,通过采用无应变AlInN插入层技术和原位SiNx插入层技术从湮灭和阻挡两个方面降低堆垛层错的密度,从而提高半极性GaN材料的结晶质量。研究结果将为提高可用于半极性LED的GaN材料生长提供一些具体的实验思路和方法,同时对完善半极性GaN生长和缺陷控制基本理论做出贡献。
中文关键词: 半极性;非极性;氮化镓;堆垛层错;
英文摘要: Semipolar GaN material has attracted considerable attention as it can eliminate 80% of the quantum confined Stark effect, and the growth process window is very wide. High stacking fault density in the semipolar GaN material seriously hampered the performance of materials and devices. This project to solve the stacking fault inserted by using the unstrained AlInN layer technology and in situ SiNx insertion layer technology from annihilation and blocking two ways to reduce the stacking fault density, to improve the crystalline quality of the semipolar GaN material. The research results will improve the crystalline quality of GaN that can be used for semipolar LED to provide some specific experimental ideas and methods, at the same time contribute to improve the basic theory of semipolar GaN growth and defect control.
英文关键词: semipolar;nonpolar;GaN;BSF;