面向SOP的非易失性薄膜晶体管存储器及其可靠性研究

项目名称： 面向SOP的非易失性薄膜晶体管存储器及其可靠性研究

项目编号： No.61274088

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 无线电电子学、电信技术

项目作者： 丁士进

作者单位： 复旦大学

项目金额： 84万元

中文摘要： 本项目面向先进的系统面板（SOP）的应用，开展基于非晶态的铟镓锌氧化物（a-IGZO）沟道的非易失性薄膜晶体管（TFT）存储器的原型器件的研究。拟以原子层淀积的介质薄膜和金属纳米点为关键材料，通过对器件物理机构的设计和材料的筛选，获得具有特定空间结构和材料组成的电荷隧穿层、阻挡层以及电荷存储媒介，以满足SOP应用对低功耗和良好数据保持特性的TFT存储器的性能要求。通过对存储器原型器件的编程/擦除特性、电荷保持特性、耐受性以及高温和偏压应力下的电学可靠性进行研究，深入理解不同条件下存储器的编程/擦除机理，以及器件性能发生退化的微观机制，为设计新型物理结构TFT存储提供理论依据，为制备高性能TFT存储器提供技术路线。

中文关键词： 系统面板；非晶铟镓锌氧化物；薄膜晶体管；非易失性存储器；原子层淀积

英文摘要： This project faces the applications to advanced system-on-panel (SOP), and investigates non-volatile thin-film-transistor (TFT) memory devices based on a-IGZO channel. This project will employ atomic-layer-deposition (ALD) dielectric films and metal nanodots as key materials of TFT memory devices. By designing of physical structure and screening of materials, it is anticipant of obtaining charge tunneling layer, blocking layer and charge storage medium with optimized spacial structure and material compositions, in order to meet the requirements of TFT memory devices with low operating voltages and good data retention for the SOP applications. Further, this project will investigate the programming/erasing charcteristics, charge retention and endurance of the memory device as well as its electrical reliability under high temperature and biasing stress, and will understand deeply the programming and ersing mechanisms of the memory devices under different conditions, and the microcosmic mechanisms for degradation of the performances of the memory devices. These can provide basic fundamentals for novel physical structures of TFT memory device, and offer technical solutions of high performance TFT memory devices.

英文关键词： system on panel；amorphous In-Ga-Zn-O；thin-film transistor；nonvolatile memory；atomic layer deposition