深亚微米SOI器件总剂量辐射模型及背栅加固技术研究

项目名称： 深亚微米SOI器件总剂量辐射模型及背栅加固技术研究

项目编号： No.61504047

项目类型： 青年科学基金项目

立项/批准年度： 2016

项目学科： 无线电电子学、电信技术

项目作者： 黄辉祥

作者单位： 集美大学

项目金额： 20万元

中文摘要： SOI技术被称为“二十一世纪的硅集成电路技术”，在高速、低功耗、抗辐射领域有着广泛的应用。SOI器件绝缘埋层减小了器件电荷收集体积，大大提高了SOI电路的抗单粒子和抗瞬态辐射能力；同时，因寄生背栅晶体管的存在其抗总剂量辐射能力较弱，难以满足当前航空航天任务的要求。现有的硅离子注入方案在高剂量注入条件下容易使SOI材料的顶层硅产生无法修复的非晶化损失。本项目提出了新的多步注入工艺，在加固SOI器件背栅寄生晶体管的同时，又不对前栅晶格完整性产生破坏。在充分研究离子注入引入的亚稳态电子陷阱和硅纳米团簇俘获/释放电子行为的基础上，对其电学行为进行材料-器件-电路层次的仿真建模，指导加固SOI电路的设计实现，并利用SOI/CMOS器件和小规模电路流片测试和验证。通过材料-器件-电路多层次的加固工艺仿真建模，为研制国产高性能、抗辐射SOI电路奠定基础。

中文关键词： 离子注入；绝缘体上硅；抗辐射加固；部分耗尽；器件建模

英文摘要： SOI technology has been recognized as 21st century's silicon IC technology, and widely used in the field of high-speed, low power consumption and radiation tolerant electronics. Due to buried oxides, SOI circuits are highly resistant to single-event effects and transient radiation effects, which also reduces total dose hardness. The traditional total dose radiation hardening process is vulnerable to total amorphization of top silicon layers, which is hardly removed during the post-implantation high-temperature annealing. In order to avoid the total amorphization of top silicon films, we propose a novel hardening technique process which reduces the implant dose and increases implant times. After thoughly investigating on the capture/release behaviors of meta-stable electron traps and silicon nanoclusters, they are simulated and model in material, device and circuit levels, which helps SOI circuit design. Multiple-simulation and modeling of hardening process serve as the fundametals of high-performance and radiation hardened SOI circuit.

英文关键词： Ion Implantation;Silicon-on-Insulator;Radiation Hardening;Partially-Depleted;Device Modeling