项目名称: 镓辅助热氧化生长ZnO/ZnGa2O4复合层及其发光机理研究
项目编号: No.51202191
项目类型: 青年科学基金项目
立项/批准年度: 2013
项目学科: 无机非金属材料学科
项目作者: 杨卿
作者单位: 西安理工大学
项目金额: 25万元
中文摘要: 金属电极与ZnO非欧姆接触形成的肖特基势垒会影响ZnO-LED的发光性能,且高效、稳定的p-ZnO仍不易获得。基于n-ZnO构筑肖特基ZnO-LED是解决这一问题的有效途径,可在金属-半导体界面实现载流子注入发光。针对肖特基ZnO-LED工作电压较高的问题,本项目提出基于ZnO/ZnGa2O4复合层结构构筑低电压ZnO-LED的解决途径。选择ZnS块体和磁控溅射生长的ZnS薄膜作为源基板,采用镓辅助热氧化生长ZnO/ZnGa2O4复合层。考察ZnO/ZnGa2O4复合层微观结构随生长条件的演变规律,分析ZnO/ZnGa2O4复合层的发光特性及其影响因素,建立ZnO/ZnGa2O4复合层微观结构特征与发光特性的关系,阐明ZnO/ZnGa2O4复合层的生长机制和发光机理,揭示基于ZnO/ZnGa2O4复合层结构的低电压ZnO-LED的构筑原理,为通过简单方法构筑低电压ZnO-LED提供新思路。
中文关键词: ZnO/ZnGa2O4复合层;热氧化;Ga掺杂ZnO;载流子注入发光;光致发光
英文摘要: The non-Ohmic contact between metal electrode and ZnO due to the formation of Schottky barrier would worsen the luminescent properties of ZnO-based LEDs (ZnO-LEDs). In addition, it is still difficult to obtain an efficient and stable p-type ZnO. Therefore, one of the effective solutions to these problems is to construct a Schottky ZnO-LED based on an n-type ZnO wherein the carrier injected light emission could easily occur at a metal-semiconductor junction. However, the operation voltage of Schottky ZnO-LEDs is generally high. Therefore, a new solution is proposed to construct ZnO-LEDs with a low operation voltage by using ZnO/ZnGa2O4 composite layers. In this research, the ZnO/ZnGa2O4 composite layers will be grown by the thermal oxidation with gallium. ZnS films grown by magnetron sputtering technique and purchased ZnS bulks will serve as the source substrates. The evolution behavior of the microstructures in consideration of the growth conditions will be investigated and the luminescent properties with related impact factors will be analyzed. The relationship between the microstructures and luminescent properties of the ZnO/ZnGa2O4 composite layers will be established. The growth mechanism as well as the luminescent mechanism of the ZnO/ZnGa2O4 composite layers will be clarified. The construction principle of
英文关键词: ZnO/ZnGa2O4 composite layer;thermal oxidation;Ga-doped ZnO;carrier injected light emission;photoluminescence