高效GaN基绿光LED研究

项目名称： 高效GaN基绿光LED研究

项目编号： No.61334009

项目类型： 重点项目

立项/批准年度： 2014

项目学科： 无线电电子学、电信技术

项目作者： 王军喜

作者单位： 中国科学院半导体研究所

项目金额： 260万元

中文摘要： 基于富铟的InGaN/GaN绿光结构材料一直是固态显示、照明领域的一个难点，被称为“Green Gap”。目前高效绿光发光二极管（LED）的电光转换效率仅为20%。本项目将开展高效氮化镓基绿光LED材料和机理的研究。针对富铟的激子局域化现象，开展团簇原子输运及复合的理论计算和模拟，并进行高铟组分InGaN/GaN量子阱内强压电极化电场的调控。研究基于非极性材料的结构性质、应力状况、面内极化特征、光电性质及其随结构和外场参数的变化规律。开展研究“3D空穴”即界面极化电荷向材料内部输运的机制，以获得新机制下高空穴浓度的金属极性面p型共掺杂材料，并开展大电流注入下外场条件下对富铟材料体系输运复合性能的影响的系统研究。实现发光波长大于520 nm，内量子效率大于50%的高效绿光LED，空穴浓度大于2E18/cm^3。实现大电流密度下高光色品并具有自主知识产权的高效氮化物绿光LED。

中文关键词： 绿光发光二极管;高铟组分;高效率;大电流密度;

英文摘要： High efficiency green light emitting diodes have attracted a great attention for application as key components in high-power white light illumination, full color display and so on. However, the electro-optic conversion efficiency is very low, about 20% in the present. The key points are droop under the high current density, wavelength shifts with increasing current and so on. Based on the investigation of green nitride light emitting diodes, we will study the high efficiency green light emitting diodes. We will investigate the modification of the piezoelectric fields in the InGaN/GaN multiple quantum wells, investigate the P-type doping to enhance the hole concentration, and investigate the performance change of the green nitride light emitting diodes under high current density. The energy band of the active region will be modified to reduce the strain at the interface between the barrier and the well, then enhancing the wave function overlap of the hole and electron to obtain a high radiative efficiency. Nonpolar and semipolar growth of high-indium-content quantum wells will be extensively investigated for the elimination or reduction of polarization-related electric fields. The high density mobile three-dimensional hole gas obtained by polarization doping will be studied and applied to the green light emitting diodes to obtain a sufficient hole injection. The In-Mg co-doped p-type GaN epilayers will be grown and researched to get high hole concentration. The aims of the project are to realizing internal quantum efficiency of 50%, with the peak wavelength above 520 nm, and the hole concentration exceeding 2E18 /cm^3, then fabricated green light emitting diodes with proprietary intellectual property rights.

英文关键词： Green LED;High In fraction;high efficiency ;high current density