SiC单晶衬底的大气等离子体亚纳米级高效平坦化机理与方法研究

项目名称： SiC单晶衬底的大气等离子体亚纳米级高效平坦化机理与方法研究

项目编号： No.51305104

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 机械、仪表工业

项目作者： 张巨帆

作者单位： 哈尔滨工业大学

项目金额： 26万元

中文摘要： SiC单晶衬底表面完整性直接影响到外延薄膜质量，但其高硬度、高化学稳定性等特点使得高精度无损伤SiC表面的高效加工极其困难。本项目针对SiC单晶亚纳米级表面的无损抛光，开展大气等离子体高效平坦化机理与方法的深入研究。建立大气压活性粒子放电激发模型，探索SiC的反应路径和关键速率控制步骤。建立温度-速率定量控制模型，提出基于温度诱导反应速率差异性控制的区域选择性去除机理。完成气-固界面复相化学反应的量子化学仿真分析，揭示大气等离子体化学过程对表面形貌的反应选择性机理。建立Lucy-Richardson非线性驻留函数模型，提出工艺设计量化模型和低粒子浓度条件下的稳定控制方法。针对提出的大气等离子体高效平坦化机理与方法，完成亚纳米级面型加工的实验验证。本项目有望开辟一条超硬衬底高效无损平坦化的新技术途径，对于支持高性能半导体器件在航天、国防等领域的应用推广，也具有重要的科学意义和应用价值。

中文关键词： 大气等离子体；平坦化；碳化硅；加工速率；表面完整性

英文摘要： Surface integrity of single crystal SiC substrate impacts epitaxial film quality directly. Due to its high hardness and chemical stability, SiC surface is always machined with low efficiency and high damage by conventional planarization technologies. Atmospheric pressure plasma chemical machining provides new feasibility to solve this problem. In this project,planarization mechanism of atmospheric pressure plasma machining is analyzed,and implementation method with subnanometer accuracy and high removal rate is then studied.First, particles excitation model under atmospheric discharge is proposed with quantitative rate coefficents. Reaction path of SiC in F/O chemically reactive atmosphere is investigated to reveal the key rate control steps.Quantitative relationship between temperature and removal rate is analyzed.Then the regionally selective removal mechanism based on temperature-induced machining rate diversity is presented. By quantum chemistry simulation, reaction process between heterogeneous atoms on the gas-solid interface is investigated to reveal the selectivity of atmospheric pressure plasma chemical process on surface micro-topographies. Lucy-Richardson dwell function is proposed, and corresponding parameters optimization method is developed to make it applicable.Removal amount is considered to matc

英文关键词： atmospheric pressure plasma；planarization；silicon carbide；removal rate；surface integrity