移动碲溶剂熔区法生长大体积探测器级CdZnTe晶体的研究

项目名称： 移动碲溶剂熔区法生长大体积探测器级CdZnTe晶体的研究

项目编号： No.11275122

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 数理科学和化学

项目作者： 闵嘉华

作者单位： 上海大学

项目金额： 80万元

中文摘要： 本项目将依据降低晶体中杂质缺陷浓度，以此来减少对补偿杂质的需求从而提高μτ值这一思想，开展移动碲溶剂熔区法生长高分辨率大体积CdZnTe晶体及利用晶体中碲夹杂的吸杂作用进一步提高晶体性能的研究。研究分析生长过程中热量输运和质量输运机理，揭示晶体生长参数和晶体完整性之间的内在关系，优化生长参数，掌握移动碲溶剂熔区法生长大体积CdZnTe晶体的关键技术；研究稳态生长条件、晶体生长过程中碲夹杂的形成机理，找出抑制其形成或控制其数量和大小的方法；研究碲夹杂在分压控制下的热处理条件下的行为和动力学数据，开拓一个利用残余碲夹杂的吸杂作用来提高晶体性能的新方法。争取在制备高性能、大体积、高成品率CdZnTe单晶的理论与工艺研究上有所突破，最终研制出具有我国自主知识产权的、适用于制作核探测器及高分辨率γ能谱仪的CdZnTe晶体，使我国在这一领域的研究能迅速跻身于世界行列。

中文关键词： CdZnTe；晶体生长；移动溶剂熔区法；Te夹杂；核探测器

英文摘要： The growth of high-resolution and large-volume CdZnTe crystal by traveling molten zone method and the optimization of crystal performance by Te inclusions gettering effect have been investigated in the project, which is based on the reduce of impurity defects concentration, leading to the improvement of mobility lifetime product with lower impurity compensation. The mechanism of heat and mass transport during the growth process has been investigate, indicating the relationship between the crystal growth parameters and crystal integrity. Subsequently, due to the optimization of growth parameters, the pivotal technology of large-volume CdZnTe crystals by THM has been proposed. Furthermore, in view of the principle of Te inclusions formation during the stability state growth, the scale and the concentration of Te inclusions could be dominated. In addtion, the heat treatment of Te inclusions by the partial pressure has been implied, developing a new way to improve the crystal performance by Te inclusions gettering effect. Generally, the project will strive for a breakthrough on the theory and technology of preparation for high-performance, large-volume, high-yield CdZnTe single crystals, which ultimately apply to the production of nuclear detector and high-resolution gamma spectrometer with our own intellectual pro

英文关键词： CdZnTe；crystal growth；traveling molten zone method；Te inclusion；nuclear detector