采用RPCVD外延法在硅衬底上直接制备石墨烯的研究

项目名称： 采用RPCVD外延法在硅衬底上直接制备石墨烯的研究

项目编号： No.61306124

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 无线电电子学、电信技术

项目作者： 罗军

作者单位： 中国科学院微电子研究所

项目金额： 30万元

中文摘要： 自2010年石墨烯的开创性研究者被授予诺贝尔物理奖以来，石墨烯由于其优异的物理和化学特性受到了广泛的关注和研究，它也被视为下一代集成电路（IC）器件的替代材料之一。目前石墨烯的制备主要有常规化学气相沉积法（金属衬底）、机械剥离法、有机合成法以及碳化硅热解法等，这些方法由于金属污染、重复性差以及成本高昂等因素，均无法在主流的IC工艺中大规模应用。因此，在本课题中我们提出采用减压化学气相沉积（RPCVD）外延的方法在硅衬底上直接制备石墨烯的新方法，主要思路包括先用RPCVD法在硅衬底上外延高质量SiC薄膜，然后在真空中退火得到石墨烯。实施路线主要包括两方面：（1）硅衬底上外延SiC，然后在真空下高温热退火将硅原子升华挥发，剩下的碳原子自组装形成石墨烯;（2）硅衬底上外延SiC，高温退火的同时通入C2H4或C2H6进行石墨烯的化学气相淀积。该方法与主流IC工艺完全兼容，有利于石墨烯的大规模应用。

中文关键词： 石墨烯；硅锗基衬底；转移工艺；器件；

英文摘要： Since the Nobel prize was awarded to the pioneering researchers in graphene in 2010, graphene as its excellent electronic, physical and chemical properties has been attracting enormous attention. It is also popularly deemed as the alterative materials in the next-generation IC devices. Common methods to synthetizing graphene including chemical vapor deposition on metal catalyst substrate,mechnical exfoliation, organic synthesis and graphitization of SiC substrates, are all incompatible with the mainstream IC processing due to metal contamination, poor repeatability and high substrate cost. We therefore in this project propose a novel method to directly fabricating graphene on large-size Si substrate (4-8 inches in diameter) by means of reduced pressure chemical vapor deposition (RPCVD). This method relys on the basic idea as the following: epitaxial growth of high-quality SiC layer on top of Si substrate and then followed by the high temperature annealing in vaccum to sublime Si atoms, remanent C atoms will self-assembly into graphene. This method is completely compatible with the mainstream IC processing， which is ought to facilitate the mass production of graphene-based devices in future.

英文关键词： Graphene；Si/Ge substrate；transfer process；devices；