宽带光吸收材料的原位非平衡超掺杂及其在太阳电池中的应用研究

项目名称： 宽带光吸收材料的原位非平衡超掺杂及其在太阳电池中的应用研究

项目编号： No.61474030

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 无线电电子学、电信技术

项目作者： 沈晓明

作者单位： 广西大学

项目金额： 79万元

中文摘要： InGaN三元合金的直接带隙宽度可在0.7eV至3.4eV之间连续可调，它在光电子和电子器件中都具有重要应用价值，在太阳电池中也有良好应用前景。之所以它目前的研究进展缓慢，关键是因为高质量富In单相InGaN材料的制备还存在相分离等技术难题。本项目计划利用激光分子束外延（LMBE）薄膜制备技术在Si(100)衬底上制备高质量高In组分单相结构的InGaN合金薄膜，充分利用LMBE技术中脉冲激光与靶材作用后形成的极端非平衡等离子体以原位非平衡超掺杂的方式来抑制InGaN相分离的产生，同时考察InGaN/Si异质结的光伏特性，初步将InGaN用于太阳电池的研制。在LMBE生长过程中，通过RHEED原位监测手段控制在Si(100)衬底表面上InGaN外延层早期的生长模式，制备出没有相分离而表面界面特性良好的InGaN/Si异质结太阳电池，为InGaN基太阳电池的研制探索出一种新的制备方法。

中文关键词： 光伏材料；太阳能电池；薄膜太阳电池；可控制被；极端非平衡

英文摘要： The bandgap of InGaN alloy semiconductor can be tunable continously in the range of 0.7eV and 3.4eV, therefore it can be used in optoelectronic and electronic devices, especially in the full spectrum high efficiency solar cells. At present, the progress in InGaN-based solar cells with relatively low In contents is limited due to the dificulities in the growth of InGaN thin films with high In contents, such as phase separation (PS) etc. In this project, laser molecular beam epitaxy (LMBE) will be used to grow high quality single phase InGaN thin films with high In contents on non-polar Si(100) substrates by using the extremely non-equilibrium condition of LMBE and in-situ super heavy doing to suppress PS. We will investigate the photovoltaic properties of InGaN/Si heterostructure with the aim to use InGaN as novel photovoltaic materials. In addition, the growth mode at the early stage of the InGaN grown on Si(100) during the LMBE proocess will be monitored in-situ by using RHEED in order to obtain high quality InGaN/Si heterostructure without PS. The research results can be used to design and prepare InGaN-based high efficiency solar cells.

英文关键词： photovoltaic materials;solar cell;thin film solar cell;controllable preparation;ultra non-ebuilibrium