非晶InGaZnO基异质结及调制掺杂薄膜晶体管的制备与研究

项目名称： 非晶InGaZnO基异质结及调制掺杂薄膜晶体管的制备与研究

项目编号： No.61504022

项目类型： 青年科学基金项目

立项/批准年度： 2016

项目学科： 无线电电子学、电信技术

项目作者： 钱凌轩

作者单位： 电子科技大学

项目金额： 20万元

中文摘要： 为了应对下一代显示技术发展的需要，并拓展非晶InGaZnO基薄膜晶体管在传感器、集成电路等领域的应用，本项目拟利用基于异质结的MODFET结构来取代目前广泛采用的、基于单个有源层的传统MOSFET结构，用以制备非晶InGaZnO基调制掺杂薄膜晶体管，以期突破非晶InGaZnO材料自身的瓶颈，大幅提升非晶InGaZnO基薄膜晶体管的载流子迁移率。其中，势阱层为非晶InGaZnO，势垒层则通过其他元素（如Mg）对非晶InGaZnO中的Zn进行部分或全部的元素替代来获得，两层材料均采用分子束外延设备生长，以获取理想的界面。进行必要的结构参数优化（如势垒层组分、厚度以及氧空位浓度），深入研究相关影响机制；并通过界面修复、间隔层以及高k栅介质层等技术手段的尝试，进一步提升器件性能。最终为制备高迁移率的非晶InGaZnO基调制掺杂薄膜晶体管提供理论基础和技术支撑，并填补国内相关领域研究的空白。

中文关键词： 薄膜晶体管；异质结；调制掺杂场效应晶体管；铟镓氧化锌；迁移率

英文摘要： In order to satisfy the requirements on the device performance of TFT from the next-generation flat-panel display, and also to broaden the applications of such device on sensor and IC, amorphous InGaZnO-based modulation-doped TFT, in which the MODFET structure replaces the conventional MOSFET one based on a single active layer, will be fabricated. The new device structure is aiming to break through the bottleneck of amorphous InGaZnO material itself and improve the carrier mobility of amorphous InGaZnO-based TFT. In the semiconductor heterojunction adopted by such a modulation-doped device, the well and barrier layers are amorphous InGaZnO and InGaZnMgO (or InGaMgO) respectively. Both layers will be deposited through molecular beam epitaxy so that a better interface quality can be achieved. In addition, the optimization on the structure parameters, including the element composition, thickness and oxygen-vacancy concentration of barrier layer, will be carried out, and the inner mechanisms affecting device performance will be in-depth investigated as well. Moreover, some specific techniques, for example, interface modification, spacer layer and high-k dielectric layer, will also be attempted in this project to further improve the device performance of amorphous InGaZnO-based modulation-doped TFT. After all the efforts, we want to provide a solution to realize the amorphous InGaZnO-based modulation-doped TFT with high carrier mobility, and thus to fill in the blank in our country.

英文关键词： TFT;Heterostructure;MODFET;InGaZnO;Mobility