p-MgNiO/立方相n-MgZnO异质结界面特性、物性调控及其深紫外发光器件研究

项目名称： p-MgNiO/立方相n-MgZnO异质结界面特性、物性调控及其深紫外发光器件研究

项目编号： No.11304128

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 数理科学和化学

项目作者： 郭纪源

作者单位： 江苏科技大学

项目金额： 28万元

中文摘要： 宽带隙半导体材料因其在深紫外发光器件中的重要应用前景而备受关注。本项目拟开展p-MgNiO/立方相n-MgZnO异质结的制备、界面特性、物性调控及其深紫外发光器件的研究工作。采用脉冲激光沉积方法制备薄膜异质结，结合第一性原理计算和形貌及光电等试验表征手段，详细研究MgNiO/立方相MgZnO异质结的界面结构、电荷转移和界面势垒的形成机制，确定界面态对载流子输运的影响；通过掺杂工程、能带工程以及制备工艺调控实现以p-MgNiO/立方相n-MgZnO为有源层的深紫外发光器件；研究薄膜生长工艺参数、结构参数、接触特性和界面特性等对器件电学和光学性能的影响；研究异质结中不同Mg组分时的能带结构，分析器件发光机制；确定器件中载流子注入、输运、复合等动力学过程。期待该课题的开展，能为高性能MgNiO/立方相MgZnO异质结深紫外发光器件的实现和研发提供理论依据及技术支撑。

中文关键词： 紫外光电探测器；界面特性；能带调节；掺杂；

英文摘要： Wide band gap semiconductor materials are special concerned for their important application prospect in deep UV light-emitting devices. This project would carry out preparation of p-MgNiO/cubic n-MgZnO heterojunction, and would explore interface characteristics, properties modulation and deep UV light-emitting device for p-MgNiO/cubic n-MgZnO based heterojunction.The heterojunctions would be prepared by pulsed laser deposition method.Combined first-principle calculation with morphology and optoelectronic characterization means to investigate the interface structure, charge transfer and interface barrier formation mechanism for the p-MgNiO/cubic n-MgZnO heterojunction. The influence of interface states on the carrier transport should be determined.The deep UV light-emitting devices with active layer of p-MgNiO/cubic n-MgZnO heteojunction are designed upon considering both doping engineering,band engineering and processes reglation.Preparation technologies, structure parameters, contact characteristics and interface characteristics would be investigated in detail for analysing their impact on the optoelectronic properties of the device.By virtue of energy band structure for the heterojunction with different Mg content, the mechanisms of light-emitting would be elucidated. Dynamic processes in the device, such as t

英文关键词： UV photodetector；Interface characteristic；band structure modulation；doping；