项目名称: 用于高效率高隔离功率传输的片上变压器
项目编号: No.61306101
项目类型: 青年科学基金项目
立项/批准年度: 2014
项目学科: 无线电电子学、电信技术
项目作者: 伍荣翔
作者单位: 电子科技大学
项目金额: 25万元
中文摘要: 光耦作为实现隔离的重要器件年销售额10亿美元,但是不能进行功率传输。片上变压器不但能实现功率传输,而且体积小、成本低、隔离能力强、速度快、寿命长。但是,目前使用片上变压器进行隔离式功率传输效率很低,ADI公司仅取得33%的功率传输效率。这是由于电感电阻比(L/R)小导致变压器效率低(70%)、工作频率高(170MHz),高工作频率又导致功率开关、整流二极管等电路元件的高功耗。因此,项目申请人发明了硅嵌入式线圈和以其为基础的交缠型和背靠背叠置型硅嵌入式无芯变压器。前期仿真和失败的实验尝试显示,交缠型和背靠背叠置型硅嵌入式无芯变压器L/R可达ADI公司的8倍和10倍,均可在50MHz的较低频率达到85%的高变压器效率。本项目的研究内容就是解决关键工艺问题,并实验展示可实现高效率高隔离功率传输的交缠型和背靠背叠置型硅嵌入式无芯变压器。本项目还将进行隔离式功率传输功耗分析和电路结构比较来完善设计。
中文关键词: 片上变压器;隔离;功率传输;;
英文摘要: As the key device for galvanic isolation, opto-coupler has an annual market size of 1 billion US dollars. However, opto-coupler cannot transfer power. On the other hand, on-chip transformer not only provides power transfer capability, but also offers small size, low cost, high isolation capability, fast speed, and long lifetime. However, currently using on-chip transformer for isolated power transfer results in rather low efficiency. For example, Analog Devices, Inc. only achieved a power transfer efficiency of 33%. This is due to the low inductance to resistance ratio (L/R) of ADI's on-chip transformer, which results in a low transformer efficiency of 70% and a high operating frequency of 170 MHz. The high operating frequency in turn lead to large power loss in other circuit components such as power switches and rectifying diodes. Therefore, we have invented silicon-embedded coil as well as the interleaved and back-to-back stacked silicon-embedded coreless transformer structures. Simulations and unseccessful experimental trials show that the interleavd and back-to-back stacked silicon-embedded coreless transformer structures can achieve L/Rs that are 8 times and 10 times larger than ADI's on-chip transformer. demonstration of the interleaved structure has verified that its L/R can be 8 times larger than ADI's o
英文关键词: On-Chip Transformer;Isolation;Power Transfer;;