帯隙可控的氮掺杂石墨烯的制备及电学性能研究

项目名称： 帯隙可控的氮掺杂石墨烯的制备及电学性能研究

项目编号： No.51202022

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 无机非金属材料学科

项目作者： 李萍剑

作者单位： 电子科技大学

项目金额： 25万元

中文摘要： 作为一种零带隙的半导体，石墨烯不适合用于逻辑器件。石墨烯带隙的打开与调控成为当前国际研究的热点与难点。针对这一难点，本项目拟通过氮原子对石墨烯的掺杂来实现对石墨烯带隙的打开与调制。首先，采用化学气相沉积法和固源生长法制备大面积的氮掺杂石墨烯，系统研究生长工艺和金原子插层退火工艺对氮原子掺杂结构和浓度的影响规律，实现氮掺杂石墨烯的可控制备；然后在此基础上，系统分析制备工艺、掺杂结构和浓度、石墨烯电子输运特性三者之间的相互影响规律，揭示氮原子替位掺杂对石墨烯能带结构的调控机制，实现大面积石墨烯带隙的打开和调控；最后，研制出高开关比、高迁移率的场效应晶体管。本项目的研究，不仅对深入理解石墨烯氮掺杂的物理效应及其带隙调控的物理机制具有基础科学意义，而且对探索石墨烯在逻辑器件的应用也具有积极意义。

中文关键词： 石墨烯；掺杂；电学性能；；

英文摘要： As a zero-bandgap semiconductor, graphene is not suitable for logic devices. It becomes a hot and tough topic to open and tune the bandgap of graphene. Here we intend to produce a tunable bandgap by controlling the nitrogen doping in graphene. Our proposal is as follows. Firstly, large-area nitrogen-doped graphene will be synthesized by chemical vapor deposition or solid source growth method. The effect of the growth parameters and the role of the post-annealing after gold interaction on the nitrogen doping structure and concentration will be systematically investigated, and optimal growth parameters of graphene with controllable nitrogen doping structure and concentration will be obtained. Then, the mechanism how the doped nitrogen atoms open and tune the band structure of graphene will be revealed after systematically investigating the interactions among the growth parameters, nitrogen structure and concentration, and electronic transport properties of nitrogen-doped graphene. Finally, nitrogen-doped graphene transistors with high on/off ratio and high mobility will be fabricated. This proposal is not only significant in understanding the doping effects and the mechanism of opening and tuning the bandgap of graphene, but also in potential applications in logic devices.

英文关键词： graphene；doping；electrical properties；；