高密度高可靠性亚阈值静态存储器的理论研究

项目名称： 高密度高可靠性亚阈值静态存储器的理论研究

项目编号： No.61204039

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 信息四处

项目作者： 柏娜

作者单位： 安徽大学

项目金额： 28万元

中文摘要： 随着无线传感网络和医疗电子为代表的应用背景对低功耗要求越来越高，能耗大户静态存储器（SRAM）的低功耗设计受到广泛关注。当电源电压降至器件亚阈值区，电路功耗可降低2到3个数量级，具有显著的低功耗优势。但依据常规电路设计理论，设计出的亚阈值电路存在可靠性和集成度受限问题，无法满足大容量SRAM技术指标。因此本项目研究亚阈值SRAM设计理论，构建能耗模型，为亚阈值SRAM设计提供理论指导；通过部分动态阈值电压调节技术与结构创新相结合的方法设计高密度高可靠存储单元；提出一种新颖的开关电流比增强方案，解决亚阈值器件开关电流比恶化导致的存储阵列密度和可靠性问题；借鉴施密特触发器"滞回"效应构建普适的亚阈值电路实现方案，增强接口电路可靠性；在上述基础上最终实现高密度高可靠亚阈值SRAM。该项目的最终成果，对亚阈值电路设计有很强的参考价值，并能推动基于SRAM的FPGA进入亚阈值区，具有深远的科学意义。

中文关键词： 亚阈值设计；静态存储器；极低功耗；高密度；高可靠

英文摘要： With the increasingly low power demand for wireless sensor networks and medical electronics, more and more researchers pay attention to low power technique for SRAM, as its power consumption dominates total chip power consumption. Aggressive voltage scaling to the subthreshold region helps achieving ultra-low power dissipation of 2-3 orders of magnitude lower power than conventional circuits. However, based on the contemporary circuit design theory, the subthreshold circuit would face the problems of low reliability and density, which would impede SRAM's practical applications. The purpose of the study is to develop a methodology for subthreshold SRAM design. There are four major parts contained in our research. First, a energy consumption model needs to be established to provide a general guidance for the subthreshold SRAM design; second, combined with structure innovation, partical dynamic threshold voltage adjustment scheme has been adopted to design high density and high reliability subthreshold bitcell; third, a new On-Off current ratio enhancement circuit has been proposed to address the problems caused by the reduced On-Off current ratio and enhance the reliability and density of SRAM array; forth, based on the hysteresis effect of the schmitt trigger, a universal circuit design scheme has been establishe

英文关键词： subthreshold design;；SRAM；ultra low power；high density；high reliability