新型高效4H-SiC MOSFET的研究

项目名称： 新型高效4H-SiC MOSFET的研究

项目编号： No.61274079

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 无线电电子学、电信技术

项目作者： 汤晓燕

作者单位： 西安电子科技大学

项目金额： 80万元

中文摘要： 4H-SiC以优越的本征优势成为下一代高功率器件的首选材料。本项目提出将p型埋层构成的浮动结(FJ)应用于SiC MOSFET的新结构，来提高功率器件的性能。基于先进的多次外延生长技术，将不连续的p型层埋于MOSFET漂移层内形成一个浮动结，在满足所需要的击穿电压条件下，将极大的降低导通损耗。开展这一新型4H-SiC 功率MOSFET器件的理论和实验研究，对提高新一代电力电子系统的能源转换效率具有重要的意义。建立器件的数值仿真模型，对浮动结的结构和形成工艺提出新型设计方案，研究器件制备的关键工艺。最终研制出高能效的碳化硅功率MOSFET，耐压达到1200V，相比于无浮结结构品质因数增大30%。

中文关键词： 碳化硅；场效应晶体管；浮动结；金属氧化物半导体；界面

英文摘要： 4H-SiC is the most promising material for a new generation of high power device due to its superior material properties. A new structure of MOSFET is presented in order to develop the performance of high power device, in which the floating junction(FJ) consisted of p-buried layer is introduced. The discontinuous p-type layer is buried in drift layer of MOSFET based on advanced epitaxial overgrowth process, which leads to the obvious reduction of condunction loss as breakdown voltage given. It is an important role for increasing conversional efficiency of a new electric power systems that theoretical and experimental study on the new type of 4H-SiC power MOSFET, including numerical calculation model, a new proposal of floating junction structure and its method fabricated, critical processes of the novel device. Finally the high efficient 4H-SiC power MOSFET would have been fabricated with breakdown voltage of 1200V and figure-of-merit of increasing 30% compared to the traditional structure.

英文关键词： Silicon Carbide；Transistor；Floating Junction；Metal-Oxide-Semiconductor；Interface