线性与非线性掺杂漂移Ti02忆阻器电路模型及仿真器研究

项目名称： 线性与非线性掺杂漂移Ti02忆阻器电路模型及仿真器研究

项目编号： No.61271064

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 无线电电子学、电信技术

项目作者： 王光义

作者单位： 杭州电子科技大学

项目金额： 98万元

中文摘要： TiO2忆阻器是2008年实现的一种新型器件，它具有记忆性、突触特性和纳米尺度，在非易失性存储器、神经网络等领域有极大的应用潜力。但目前尚未了解忆阻器的一些基本联接规律（如串并联），已有SPICE模型非易失性保持不好，由于近期内忆阻器还无法商品化，导致目前的研究无法进行实验验证和实际应用。为了给忆阻器应用提供理论基础、仿真模型和替代器件，拟提出一种忆阻器电路模型的设计方法，设计线性与非线性漂移TiO2忆阻器的SPICE模型、电路模型（仿真器）和软件细胞模型，仿真器作为忆阻器的一种替代品用于忆阻器实验和应用之中，细胞模型在FPGA/ARM等硬件平台和软件环境中可实现忆阻器硬件软用的一种新途径；基于仿真器探索忆阻器的联接规律、滞回特性、脉冲响应和忆阻器混沌特性；提出一种先数学模型后物理实现的新型忆阻器设计方法，尝试设计新忆阻器模型及仿真器，使新忆阻器问世之前用常规电路超前实现纳米新型忆阻功能。

中文关键词： 忆阻器；数学模型；电路模型；混沌电路；

英文摘要： TiO2 memeristor is a novel device realized in 2008, which is nonvolatile and exhibits nanoscale structure and synaptic characteristics, and therefor has a great application potential in storage and neural network,etc. However, the basic connection laws （such as series-parallel connection）for memristor are don't know, and nonvolatility of the existing SPICE models are poor. Moreover, commercially available memristors are not expected to appear in the near future so that it is impossible to experiment and apply with physical memristors for current researches. In order to provide certain rationale, simulation models and a replacement for memristor,this project plans to propose a method for designing memristor models, and design SPICE model, circuit model, i.e. emulator, and soft cell model for TiO2 memristor with linear and nonlineare drift. The designed emulator can be used in experiments and applications of memristor as a replacement of memristor, while the designed cell model can implement a new applications of memristor which hardware memristor can be used as a soft one based on the FPGA/ARM hardware platform and certain soft invironment. Moreover, this project also explores the laws of multi-memristors connections, hysteresis characteristics, impulse response, as well as special nature for memristor-based cha

英文关键词： Memristor；methematical model；circuit model；chaotic circuit；