项目名称: 基于忆阻器三维逾渗网格功能模型的新型电子电路关键技术研究
项目编号: No.61471377
项目类型: 面上项目
立项/批准年度: 2015
项目学科: 无线电电子学、电信技术
项目作者: 刘海军
作者单位: 中国人民解放军国防科技大学
项目金额: 83万元
中文摘要: 忆阻器凭借其独特的记忆特性,已成为电子信息科学技术领域新的、革命性的前沿研究热点之一。本课题拟围绕忆阻器三维逾渗网格功能模型建模及应用电路展开研究。目前,逾渗网格功能模型主要局限于二维平面特性的研究且未考虑混合机理的影响,本项目尝试构建一种基于多因素混合影响的三维逾渗网格功能模型,进而揭示忆阻器各方面统计特征的变化规律。基于此,对新型ADC及加解密电路进行研究。利用忆阻器在神经网络构建上的优势,设计了一种具有高精度、低功耗和小尺寸等方面优势特点的新型ADC。并且,改进和设计基于忆阻器的存储和计算单元结构以构建一种基于忆阻器的新型常规加解密电路;同时,构造一种基于忆阻器的混沌/超混沌加解密电路并研究适于忆阻器的独特加解密算法及其有效性、安全性评估标准。相关研究成果将为新型硬件加解密电路设计及解决我国在高性能ADC领域受制于人的现状提供了一条可行路径,并为器件应用及产业化提供理论和模型支撑作用
中文关键词: 忆阻器;忆阻系统;非线性器件;网络模型;非线性电路网络
英文摘要: Various aspects of research on memristor, such as fundamental theory, physical mechanism, device fabrication and technology application, have became frontier hotspots in the field of electronic information science and technology. This project is to take further research on the functional percolation network model of memristor and the memristor based electronic circuit. Currently, most research on functional percolation network model of memristor just focuses on 2D characteristics and not consider the effects of the coexisted mechanisms. In this project, through integrating each aspect of physical parameters, the 3D functional percolation network model of memristor is proved to reveal the inner complex mechanism and the changing rule of statistic characteristics. Afterwards, new memristor-based ADC is analyzed and designed by taking advantage of neural networks implemented with memristor. This ADC would exhibit many benefits, such as high precision, low power consumption, small size, etc. Meanwhile, two methods are proposed to design the novel memristor-based encryption circuit. One is to improve the storage and computing unit structure by utilizing memristor. The other one is constructing the parameters controllable chaotic/hyperchaotic encryption circuit with memristor. Furthermore, the related study results could provide a feasible solution to the design of novel encryption circuit and the high-performance ADC, which is currently disciplined by the foreign countries. And theses theory and model study results would support the emerging devices on the application and industrialization.
英文关键词: memristor;memristive system;nonlinear devices;network model;nonlinear circuit network