纳米尺度效应下a-Si:H/c-Si基异质结的光伏性能的调控机制研究

项目名称： 纳米尺度效应下a-Si:H/c-Si基异质结的光伏性能的调控机制研究

项目编号： No.61464007

项目类型： 地区科学基金项目

立项/批准年度： 2015

项目学科： 无线电电子学、电信技术

项目作者： 袁吉仁

作者单位： 南昌大学

项目金额： 46万元

中文摘要： a-Si:H/c-Si基异质结指掺杂晶体硅（c-Si）表面沉积生长另型掺杂氢化非晶硅(a-Si:H)膜层形成的异质p-n结，其间一般增加一个本征a-Si:H钝化层。各膜层厚度均在3-20nm范围内，在纳米尺度效应下各膜层性能对该异质结能带结构的影响规律尚不明晰。本项目将研究该异质结中本征/掺杂叠层3-20nm厚度范围的a-Si:H膜制备的反应机制和控制机理，探索纳米尺度效应下a-Si:H薄膜性能对a-Si:H/c-Si基异质结能带结构的影响机制，建立量子势模型来模拟量子限域效应作用下的异质结性能，并结合实验数据分析a-Si:H/c-Si基异质结的能带结构对器件光伏特性的影响，期望获得超薄a-Si:H膜性能的精确控制方法，实现对该异质结能带结构的可控调制，揭示该异质结能带结构对器件性能的影响规律，提升光伏电池的转换效率。本项目也将对其它类似异质结器件的研究提供理论参考。

中文关键词： a-Si:H/c-Si基异质结；能带结构；纳米尺度效应；转换效率

英文摘要： a-Si:H/c-Si based heterojunction is a p-n junction constituted by the doped c-Si and another type-doped a-Si:H film, in which an intrinsic a-Si:H film is usually added. The thicknesses of the intrinsic and doped a-Si:H layers are 3-20 nm, which can present strong nano-scale effect. But until now, the influence mechanism of a-Si:H films with nano-scale effect on band structure is not clear. In this project, the reaction and control mechanism for the intrinsic and doped a-Si:H films will be studied. The influence mechanism of a-Si:H films with nano-scale effect on band structure will be explored. A quantum potential model will be built to simulate the a-Si:H/c-Si based heterojunction with the quantum confinement effect. The influence mechanism of the band struture on device performance will be analyzed by the simulation and experiment method. After these efforts, it is hoped that the property of the a-Si:H films could be precisely controlled and the targeted modulation of the band structure of the a-Si:H/c-Si based heterojunction solar cells would be achieved，and the influence mechanism of the band struture on device performance would be obtained. The conversion efficiency of the a-Si:H/c-Si based heterojunction solar cell could be raised. Also, these results of this project would be helpful for the analysis on other similar semiconductor devices.

英文关键词： a-Si:H/c-Si based heterojunction;band structure;nano-scale effect;conversion efficiency